是否无铅: | 含铅 | 是否Rohs认证: | 不符合 |
生命周期: | Obsolete | 零件包装代码: | TO-251 |
包装说明: | IN-LINE, R-PSIP-T3 | 针数: | 3 |
Reach Compliance Code: | compliant | 风险等级: | 5.92 |
Is Samacsys: | N | 最大集电极电流 (IC): | 4 A |
集电极-发射极最大电压: | 500 V | 配置: | SINGLE |
最小直流电流增益 (hFE): | 5 | JEDEC-95代码: | TO-251 |
JESD-30 代码: | R-PSIP-T3 | 元件数量: | 1 |
端子数量: | 3 | 封装主体材料: | PLASTIC/EPOXY |
封装形状: | RECTANGULAR | 封装形式: | IN-LINE |
峰值回流温度(摄氏度): | NOT SPECIFIED | 极性/信道类型: | NPN |
认证状态: | Not Qualified | 表面贴装: | NO |
端子形式: | THROUGH-HOLE | 端子位置: | SINGLE |
处于峰值回流温度下的最长时间: | NOT SPECIFIED | 晶体管应用: | SWITCHING |
晶体管元件材料: | SILICON | 标称过渡频率 (fT): | 20 MHz |
Base Number Matches: | 1 |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
BUL64B | SEME-LAB |
获取价格 |
ADVANCED DISTRIBUTED BASE DESIGN HIGH VOLTAGE HIGH SPEED NPN SILICON POWER TRANSISTOR | |
BUL654 | STMICROELECTRONICS |
获取价格 |
HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR | |
BUL65A | SEME-LAB |
获取价格 |
ADVANCED DISTRIBUTED BASE DESIGN | |
BUL65B | SEME-LAB |
获取价格 |
ADVANCED DISTRIBUTED BASE DESIGN HIGH VOLTAGE HIGH SPEED NPN SILICON POWER TRANSISTOR | |
BUL66A | SEME-LAB |
获取价格 |
ADVANCED DISTRIBUTED BASE DESIGN HIGH VOLTAGE HIGH SPEED NPN SILICON POWER TRANSISTOR | |
BUL66B | SEME-LAB |
获取价格 |
ADVANCED DISTRIBUTED BASE DESIGN HIGH VOLTAGE HIGH SPEED NPN SILICON POWER TRANSISTOR | |
BUL67 | STMICROELECTRONICS |
获取价格 |
HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR | |
BUL6822 | JINANJINGHENG |
获取价格 |
TRANSISTORE | |
BUL6825 | ISC |
获取价格 |
Silicon NPN Power Transistors | |
BUL6825 | SAVANTIC |
获取价格 |
Silicon NPN Power Transistors |