Datasheet > BUL69

BUL69

更新时间： 2024-11-13 23:37:23

品牌	Logo	应用领域
其他 - ETC		/
页数	文件大小	规格书
2页	24K
描述
NPN

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中文翻译

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数据手册

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BUL69 数据手册

BUL70A

SEME

LAB

ADVANCED

DISTRIBUTED BASE DESIGN

HIGH VOLTAGE

MECHANICAL DATA

Dimensions in mm

0.32

0.24

HIGH SPEED NPN

SILICON POWER TRANSISTOR

0.10

0.02

16°

max.

13°

Designed for use in

electronic ballast applications

1.70

max.

10°

max.

• SEMEFAB DESIGNED AND DIFFUSED DIE

• HIGH VOLTAGE

6.7

6.3

3.1

2.9

• FAST SWITCHING

• HIGH ENERGY RATING

3.7 7.3

3.3 6.7

• SURFACE MOUNT FOOT PRINT

FEATURES

1.05

0.85

0.80

0.60

2.30

• Multi–base for efficient energy distribution

across the chip resulting in significantly

improved switching and energy ratings

across full temperature range.

4.60

SOT-223

• Ion implant and high accuracy masking for

tight control of characteristics from batch to

batch.

Pin 1 - Base

Pin 3 - Emitter

Pin 4 - Collector

Pin 2 - Collector

• Triple Guard Rings for improved control of

high voltages.

ABSOLUTE MAXIMUM RATINGS (T

= 25°C unless otherwise stated)

Collector – Base Voltage(I =0) 1000V

case

CBO

CEO

EBO

Collector – Emitter Voltage (I = 0)

500V

Emitter – Base Voltage (I = 0)

10V

Continuous Collector Current

Peak Collector Current

Base Current

C(PK)

Total Dissipation at T

= 25°C

tot

case

Operating and Storage Temperature Range

–55 to +150°C

stg

Prelim. 2/97

Semelab plc. Telephone (01455) 556565. Telex: 341927. Fax (01455) 552612.

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