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BUL791

更新时间: 2024-11-13 22:39:43
品牌 Logo 应用领域
POINN 晶体晶体管开关局域网
页数 文件大小 规格书
7页 117K
描述
NPN SILICON POWER TRANSISTOR

BUL791 技术参数

生命周期:Transferred包装说明:FLANGE MOUNT, R-PSFM-T3
Reach Compliance Code:unknown风险等级:5.77
外壳连接:COLLECTOR最大集电极电流 (IC):4 A
集电极-发射极最大电压:400 V配置:SINGLE
最小直流电流增益 (hFE):2JEDEC-95代码:TO-220AB
JESD-30 代码:R-PSFM-T3元件数量:1
端子数量:3封装主体材料:PLASTIC/EPOXY
封装形状:RECTANGULAR封装形式:FLANGE MOUNT
极性/信道类型:NPN认证状态:Not Qualified
表面贴装:NO端子形式:THROUGH-HOLE
端子位置:SINGLE晶体管应用:SWITCHING
晶体管元件材料:SILICONBase Number Matches:1

BUL791 数据手册

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BUL791  
NPN SILICON POWER TRANSISTOR  
Copyright © 1997, Power Innovations Limited, UK  
JULY 1991 - REVISED SEPTEMBER 1997  
Designed Specifically for High Frequency  
Electronic Ballasts up to 125 W  
TO-220 PACKAGE  
(TOP VIEW)  
h
6 to 22 at V = 1 V, I = 2 A  
FE CE C  
1
2
3
B
C
E
Low Power Losses (On-state and Switching)  
Key Parameters Characterised at High  
Temperature  
Tight and Reproducible Parametric  
Distributions  
Pin 2 is in electrical contact with the mounting base.  
MDTRACA  
absolute maximum ratings at 25°C ambient temperature (unless otherwise noted)  
RATING  
SYMBOL  
VALUE  
UNIT  
Collector-emitter voltage (VBE = 0)  
Collector-base voltage (IE = 0)  
Collector-emitter voltage (IB = 0)  
Emitter-base voltage  
VCES  
VCBO  
VCEO  
VEBO  
IC  
700  
V
V
700  
400  
V
9
V
Continuous collector current  
Peak collector current (see Note 1)  
Peak collector current (see Note 2)  
Continuous base current  
4
A
ICM  
ICM  
IB  
8
A
14  
2.5  
A
A
Peak base current (see Note 2)  
IBM  
3.5  
A
Continuous device dissipation at (or below) 25°C case temperature  
Operating junction temperature range  
Ptot  
Tj  
75  
W
°C  
°C  
-65 to +150  
-65 to +150  
Storage temperature range  
Tstg  
NOTES: 1. This value applies for tp = 10 ms, duty cycle £ 2%.  
2. This value applies for tp = 300 µs, duty cycle £ 2%.  
P R O D U C T  
I N F O R M A T I O N  
Information is current as of publication date. Products conform to specifications in accordance  
with the terms of Power Innovations standard warranty. Production processing does not  
necessarily include testing of all parameters.  
1

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TRANSISTOR | BJT | NPN | 400V V(BR)CEO | 10A I(C) | TO-220VAR