Datasheet > BUL742C_08

BUL742C_08

更新时间： 2024-11-14 06:44:39

品牌	Logo	应用领域
意法半导体 - STMICROELECTRONICS		晶体开关晶体管高压
页数	文件大小	规格书
12页	287K
描述
High voltage fast-switching NPN power transistor

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中文翻译

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BUL742C_08 数据手册

BUL742C

BULB742C

High voltage fast-switching

NPN power transistor

Features

■ Low spread of dynamic parameters

■ High voltage capability

■ Minimum lot-to-lot spread for reliable operation

■ Very high switching speed

Applications

I²PAK

TO-220

■ Electronic ballast for fluorescent lighting

■ Switch mode power supplies

Description

The device is manufactured using high voltage

multi-epitaxial planar technology for high

switching speeds and high voltage capability.

Thanks to an increased intermediate layer, it has

an intrinsic ruggedness which enables the

transistor to withstand an high collector current

level during breakdown condition, without using

the transil protection usually necessary in typical

converters for lamp ballast.

Figure 1.

Internal schematic diagram

Table 1.

Order code

BUL742C

BULB742C-1

Device summary

Marking

BUL742C

BULB742C

Package

Packaging

TO-220

I²PAK

Tube

May 2008

Rev 3

1/12

www.st.com

12 3 4 5 6 7...12

中文翻译

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