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BUL742C PDF预览

BUL742C

更新时间: 2024-11-14 03:23:11
品牌 Logo 应用领域
意法半导体 - STMICROELECTRONICS 晶体开关晶体管功率双极晶体管高压局域网
页数 文件大小 规格书
7页 281K
描述
HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR

BUL742C 技术参数

是否Rohs认证:符合生命周期:Active
零件包装代码:TO-220AB包装说明:ROHS COMPLIANT, TO-220, 3 PIN
针数:3Reach Compliance Code:not_compliant
ECCN代码:EAR99Factory Lead Time:8 weeks
风险等级:1.69Is Samacsys:N
外壳连接:COLLECTOR最大集电极电流 (IC):4 A
集电极-发射极最大电压:400 V配置:SINGLE
最小直流电流增益 (hFE):25JEDEC-95代码:TO-220AB
JESD-30 代码:R-PSFM-T3JESD-609代码:e3
元件数量:1端子数量:3
最高工作温度:150 °C封装主体材料:PLASTIC/EPOXY
封装形状:RECTANGULAR封装形式:FLANGE MOUNT
峰值回流温度(摄氏度):NOT SPECIFIED极性/信道类型:NPN
最大功率耗散 (Abs):70 W认证状态:Not Qualified
子类别:Other Transistors表面贴装:NO
端子面层:Tin (Sn)端子形式:THROUGH-HOLE
端子位置:SINGLE处于峰值回流温度下的最长时间:NOT SPECIFIED
晶体管应用:SWITCHING晶体管元件材料:SILICON
Base Number Matches:1

BUL742C 数据手册

 浏览型号BUL742C的Datasheet PDF文件第2页浏览型号BUL742C的Datasheet PDF文件第3页浏览型号BUL742C的Datasheet PDF文件第4页浏览型号BUL742C的Datasheet PDF文件第5页浏览型号BUL742C的Datasheet PDF文件第6页浏览型号BUL742C的Datasheet PDF文件第7页 
BUL742C  
HIGH VOLTAGE FAST-SWITCHING  
NPN POWER TRANSISTOR  
Ordering Code  
Marking  
Package / Shipment  
TO-220 / Tube  
BUL742C  
BUL742C  
HIGH VOLTAGE CAPABILITY  
LOW SPREAD OF DYNAMIC PARAMETERS  
MINIMUM LOT-TO-LOT SPREAD FOR  
RELIABLE OPERATION  
VERY HIGH SWITCHING SPEED  
3
2
APPLICATIONS:  
1
ELECTRONIC BALLAST FOR FLUORESCENT  
LIGHTING  
TO-220  
SWITCH MODE POWER SUPPLIES  
DESCRIPTION  
The device is manufactured using High Voltage  
Multi Epitaxial Planar technology for high switching  
speeds and high voltage capability.  
INTERNAL SCHEMATIC DIAGRAM  
Thanks to an increased intermediate layer, it has an  
intrinsic ruggedness which enables the transistor to  
withstand an high collector current level during  
breakdown condition, without using the transil  
protection usually necessary in typical converters  
for lamp ballast.  
ABSOLUTE MAXIMUM RATINGS  
Symbol  
Parameter  
Value  
1050  
400  
Unit  
V
V
CES  
Collector-Emitter Voltage (V = 0)  
BE  
V
Collector-Emitter Voltage (I = 0)  
V
CEO  
B
V
Emitter-Base Voltage (I = 0, I < 2 A, t < 10 ms)  
V
V
EBO  
C
B
p
(BR)EBO  
I
Collector Current  
4
A
C
I
Collector Peak Current (t < 5 ms)  
8
A
CM  
p
I
Base Current  
2
A
B
I
Base Peak Current (t < 5 ms)  
4
70  
A
BM  
p
P
Total Dissipation at T = 25 °C  
W
°C  
°C  
tot  
c
T
Storage Temperature  
–65 to 150  
150  
stg  
T
j
Max. Operating Junction Temperature  
April 2003  
1/7  

BUL742C 替代型号

型号 品牌 替代类型 描述 数据表
BUL742A STMICROELECTRONICS

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HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR
BUL742 STMICROELECTRONICS

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HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR

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