BUL642D2G

更新时间： 2024-11-14 12:49:59

品牌	Logo	应用领域
安森美 - ONSEMI		晶体晶体管
页数	文件大小	规格书
8页	101K
描述
High Speed, High Gain Bipolar NPN Transistor with Integrated Collector−Emitter and Built−in Efficient Antisaturation Network

阅读下载

中文翻译

获取价格

数据手册

如果您发现信息不准确，欢迎纠错

BUL642D2G 数据手册

BUL642D2

High Speed, High Gain

Bipolar NPN Transistor with

Integrated

Collector−Emitter and

Built−in Efficient

Antisaturation Network

http://onsemi.com

3 AMPERES

825 VOLTS

75 WATTS

The BUL642D2 is a state−of−the−art High Speed High Gain

Bipolar Transistor (H2BIP). Tight dynamic characteristics and lot to

lot minimum spread (150 ns on storage time) make it ideally suitable

for Light Ballast Application. A new development process brings

avalanche energy capability, making the device extremely rugged.

POWER TRANSISTOR

Features

• Low Base Drive Requirement

• High Peak DC Current Gain (55 Typical) @ I = 300 mA/5 V

• Extremely Low Storage Time Min/Max Guarantees Due to the

H2BIP Structure which Minimizes the Spread

• Integrated Collector−Emitter Free Wheeling Diode

• Fully Characterized Dynamic V

CEsat

MARKING

DIAGRAM

• “Six Sigma” Process Providing Tight and Reproducible Parameter

Spreads

• Avalanche Energy 20 mJ Typical Capability

• Pb−Free Package is Available*

TO−220AB

CASE 221A

STYLE 1

BUL642D2G

AYWW

BUL642D2 = Device Code

= Assembly Location

= Year

= Work Week

= Pb−Free Package

ORDERING INFORMATION

Device

BUL642D2

BUL642D2G

Package

Shipping

50 Units/Rail

TO−220

(Pb−Free)

*For additional information on our Pb−Free strategy and soldering details, please

download the ON Semiconductor Soldering and Mounting Techniques

Reference Manual, SOLDERRM/D.

Publication Order Number:

August, 2005 − Rev. 1

BUL642D2/D

12 3 4 5 6 7 8

中文翻译

下载PDF

与BUL642D2G相关器件

型号	品牌	获取价格	描述	数据表
BUL64A	SEME-LAB	获取价格	ADVANCED DISTRIBUTED BASE DESIGN HIGH VOLTAGE HIGH SPEED NPN SILICON POWER TRANSISTOR
BUL64B	SEME-LAB	获取价格	ADVANCED DISTRIBUTED BASE DESIGN HIGH VOLTAGE HIGH SPEED NPN SILICON POWER TRANSISTOR
BUL654	STMICROELECTRONICS	获取价格	HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR
BUL65A	SEME-LAB	获取价格	ADVANCED DISTRIBUTED BASE DESIGN
BUL65B	SEME-LAB	获取价格	ADVANCED DISTRIBUTED BASE DESIGN HIGH VOLTAGE HIGH SPEED NPN SILICON POWER TRANSISTOR
BUL66A	SEME-LAB	获取价格	ADVANCED DISTRIBUTED BASE DESIGN HIGH VOLTAGE HIGH SPEED NPN SILICON POWER TRANSISTOR
BUL66B	SEME-LAB	获取价格	ADVANCED DISTRIBUTED BASE DESIGN HIGH VOLTAGE HIGH SPEED NPN SILICON POWER TRANSISTOR
BUL67	STMICROELECTRONICS	获取价格	HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR
BUL6822	JINANJINGHENG	获取价格	TRANSISTORE
BUL6825	ISC	获取价格	Silicon NPN Power Transistors