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BUL58 PDF预览

BUL58

更新时间: 2024-11-13 22:17:31
品牌 Logo 应用领域
SEME-LAB 晶体晶体管高压
页数 文件大小 规格书
2页 26K
描述
ADVANCED DISTRIBUTED BASE DESIGN HIGH VOLTAGE HIGH SPEED NPN SILICON POWER TRANSISTOR

BUL58 数据手册

 浏览型号BUL58的Datasheet PDF文件第2页 
BUL58BSMD  
ADVANCED  
DISTRIBUTED BASE DESIGN  
HIGH VOLTAGE  
MECHANICAL DATA  
Dimensions in mm  
HIGH SPEED NPN  
0
.
8
9
(
0
.
0
3
5
)
m
i
n
.
SILICON POWER TRANSISTOR  
3
3
.
.
7
4
0
1
(
(
0
0
.
.
1
1
4
3
6
4
)
)
3
3
.
.
7
4
0
1
(
(
0
0
.
.
1
1
4
3
6
4
)
)
3
.
6
0
(
0
M
a
x
.
SEMEFAB DESIGNED AND DIFFUSED  
HIGH VOLTAGE  
1
3
FAST SWITCHING  
HIGH ENERGY RATING  
2
FEATURES  
• Multi–base for efficient energy distribution  
across the chip resulting in significantly  
improved switching and energy ratings  
across full temperature range.  
9
9
.
.
6
3
7
8
(
(
0
0
.
.
3
3
8
6
1
9
)
)
0
0
.
.
5
2
0
6
1
1
1
1
.
.
5
2
8
8
(
(
0
0
.
.
4
4
5
4
6
4
)
)
• Ion implant and high accuracy masking for  
tight control of characteristics from batch to  
batch.  
SMD1 PACKAGE  
• Triple Guard Rings for improved control of  
high voltages.  
Pad 1 – Base  
Pad 2 – Collector  
Pad 3 – Emitter  
ABSOLUTE MAXIMUM RATINGS (T  
= 25°C unless otherwise stated)  
case  
V
V
V
Collector – Base Voltage  
Collector – Emitter Voltage (I = 0)  
180V  
90V  
CBO  
CEO  
EBO  
B
Emitter – Base Voltage (I = 0)  
10V  
C
I
I
I
Collector Current  
Peak Collector Current  
Base Current  
7A  
C
10A  
C(PK)  
B
2A  
P
Total Dissipation at T  
= 25°C  
50W  
tot  
case  
Derate above 25°C when used on efficient heatsink  
Operating and Storage Temperature Range  
0.28W/°C  
–65 to 200°C  
T
stg  
Semelab plc. Telephone +44(0)1455 556565. Fax +44(0)1455 552612.  
E-mail: sales@semelab.co.uk Website: http://www.semelab.co.uk  
Prelim. 7/00  

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