Datasheet > BUL58

BUL58

更新时间： 2024-09-25 22:17:31

品牌	Logo	应用领域
SEME-LAB		晶体晶体管高压
页数	文件大小	规格书
2页	26K
描述
ADVANCED DISTRIBUTED BASE DESIGN HIGH VOLTAGE HIGH SPEED NPN SILICON POWER TRANSISTOR

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数据手册

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BUL58 数据手册

BUL58BSMD

ADVANCED

DISTRIBUTED BASE DESIGN

HIGH VOLTAGE

MECHANICAL DATA

Dimensions in mm

HIGH SPEED NPN

(

)

SILICON POWER TRANSISTOR

(

)

(

)

(

•SEMEFAB DESIGNED AND DIFFUSED

•HIGH VOLTAGE

•FAST SWITCHING

•HIGH ENERGY RATING

FEATURES

• Multi–base for efficient energy distribution

across the chip resulting in significantly

improved switching and energy ratings

across full temperature range.

(

)

(

)

• Ion implant and high accuracy masking for

tight control of characteristics from batch to

batch.

SMD1 PACKAGE

• Triple Guard Rings for improved control of

high voltages.

Pad 1 – Base

Pad 2 – Collector

Pad 3 – Emitter

ABSOLUTE MAXIMUM RATINGS (T

= 25°C unless otherwise stated)

case

Collector – Base Voltage

Collector – Emitter Voltage (I = 0)

180V

90V

CBO

CEO

EBO

Emitter – Base Voltage (I = 0)

10V

Collector Current

Peak Collector Current

Base Current

10A

C(PK)

Total Dissipation at T

= 25°C

50W

tot

case

Derate above 25°C when used on efficient heatsink

Operating and Storage Temperature Range

0.28W/°C

–65 to 200°C

stg

Semelab plc. Telephone +44(0)1455 556565. Fax +44(0)1455 552612.

E-mail: sales@semelab.co.uk Website: http://www.semelab.co.uk

Prelim. 7/00

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