5秒后页面跳转
BUL58BSMD PDF预览

BUL58BSMD

更新时间: 2024-11-13 22:17:31
品牌 Logo 应用领域
SEME-LAB 晶体晶体管开关高压
页数 文件大小 规格书
2页 26K
描述
ADVANCED DISTRIBUTED BASE DESIGN HIGH VOLTAGE HIGH SPEED NPN SILICON POWER TRANSISTOR

BUL58BSMD 技术参数

是否无铅: 含铅是否Rohs认证: 不符合
生命周期:Obsolete包装说明:CHIP CARRIER, R-CBCC-N3
针数:3Reach Compliance Code:compliant
ECCN代码:EAR99风险等级:5.89
Is Samacsys:N外壳连接:COLLECTOR
最大集电极电流 (IC):7 A集电极-发射极最大电压:90 V
配置:SINGLE最小直流电流增益 (hFE):25
JESD-30 代码:R-CBCC-N3元件数量:1
端子数量:3封装主体材料:CERAMIC, METAL-SEALED COFIRED
封装形状:RECTANGULAR封装形式:CHIP CARRIER
峰值回流温度(摄氏度):NOT SPECIFIED极性/信道类型:NPN
认证状态:Not Qualified表面贴装:YES
端子形式:NO LEAD端子位置:BOTTOM
处于峰值回流温度下的最长时间:NOT SPECIFIED晶体管应用:SWITCHING
晶体管元件材料:SILICON标称过渡频率 (fT):20 MHz
Base Number Matches:1

BUL58BSMD 数据手册

 浏览型号BUL58BSMD的Datasheet PDF文件第2页 
BUL58BSMD  
ADVANCED  
DISTRIBUTED BASE DESIGN  
HIGH VOLTAGE  
MECHANICAL DATA  
Dimensions in mm  
HIGH SPEED NPN  
0
.
8
9
(
0
.
0
3
5
)
m
i
n
.
SILICON POWER TRANSISTOR  
3
3
.
.
7
4
0
1
(
(
0
0
.
.
1
1
4
3
6
4
)
)
3
3
.
.
7
4
0
1
(
(
0
0
.
.
1
1
4
3
6
4
)
)
3
.
6
0
(
0
M
a
x
.
SEMEFAB DESIGNED AND DIFFUSED  
HIGH VOLTAGE  
1
3
FAST SWITCHING  
HIGH ENERGY RATING  
2
FEATURES  
• Multi–base for efficient energy distribution  
across the chip resulting in significantly  
improved switching and energy ratings  
across full temperature range.  
9
9
.
.
6
3
7
8
(
(
0
0
.
.
3
3
8
6
1
9
)
)
0
0
.
.
5
2
0
6
1
1
1
1
.
.
5
2
8
8
(
(
0
0
.
.
4
4
5
4
6
4
)
)
• Ion implant and high accuracy masking for  
tight control of characteristics from batch to  
batch.  
SMD1 PACKAGE  
• Triple Guard Rings for improved control of  
high voltages.  
Pad 1 – Base  
Pad 2 – Collector  
Pad 3 – Emitter  
ABSOLUTE MAXIMUM RATINGS (T  
= 25°C unless otherwise stated)  
case  
V
V
V
Collector – Base Voltage  
Collector – Emitter Voltage (I = 0)  
180V  
90V  
CBO  
CEO  
EBO  
B
Emitter – Base Voltage (I = 0)  
10V  
C
I
I
I
Collector Current  
Peak Collector Current  
Base Current  
7A  
C
10A  
C(PK)  
B
2A  
P
Total Dissipation at T  
= 25°C  
50W  
tot  
case  
Derate above 25°C when used on efficient heatsink  
Operating and Storage Temperature Range  
0.28W/°C  
–65 to 200°C  
T
stg  
Semelab plc. Telephone +44(0)1455 556565. Fax +44(0)1455 552612.  
E-mail: sales@semelab.co.uk Website: http://www.semelab.co.uk  
Prelim. 7/00  

与BUL58BSMD相关器件

型号 品牌 获取价格 描述 数据表
BUL58D STMICROELECTRONICS

获取价格

HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR
BUL58D_01 STMICROELECTRONICS

获取价格

HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR
BUL59 STMICROELECTRONICS

获取价格

HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR
BUL59 ISC

获取价格

Silicon NPN Power Transistor
BUL62A SEME-LAB

获取价格

ADVANCED DISTRIBUTED BASE DESIGN HIGH VOLTAGE HIGH SPEED NPN SILICON POWER TRANSISTOR
BUL62B SEME-LAB

获取价格

ADVANCED DISTRIBUTED BASE DESIGN HIGH VOLTAGE HIGH SPEED NPN SILICON POWER TRANSISTOR
BUL63A SEME-LAB

获取价格

ADVANCED DISTRIBUTED BASE DESIGN
BUL63B SEME-LAB

获取价格

ADVANCED DISTRIBUTED BASE DESIGN HIGH VOLTAGE HIGH SPEED NPN SILICON POWER TRANSISTOR
BUL642D2 ONSEMI

获取价格

High Speed, High Gain Bipolar NPN Transistor with Integrated Collector−Emitter and B
BUL642D2G ONSEMI

获取价格

High Speed, High Gain Bipolar NPN Transistor with Integrated Collector−Emitter and B