是否无铅: | 含铅 | 是否Rohs认证: | 不符合 |
生命周期: | Obsolete | 包装说明: | CHIP CARRIER, R-CBCC-N3 |
针数: | 3 | Reach Compliance Code: | compliant |
ECCN代码: | EAR99 | 风险等级: | 5.89 |
Is Samacsys: | N | 外壳连接: | COLLECTOR |
最大集电极电流 (IC): | 7 A | 集电极-发射极最大电压: | 90 V |
配置: | SINGLE | 最小直流电流增益 (hFE): | 25 |
JESD-30 代码: | R-CBCC-N3 | 元件数量: | 1 |
端子数量: | 3 | 封装主体材料: | CERAMIC, METAL-SEALED COFIRED |
封装形状: | RECTANGULAR | 封装形式: | CHIP CARRIER |
峰值回流温度(摄氏度): | NOT SPECIFIED | 极性/信道类型: | NPN |
认证状态: | Not Qualified | 表面贴装: | YES |
端子形式: | NO LEAD | 端子位置: | BOTTOM |
处于峰值回流温度下的最长时间: | NOT SPECIFIED | 晶体管应用: | SWITCHING |
晶体管元件材料: | SILICON | 标称过渡频率 (fT): | 20 MHz |
Base Number Matches: | 1 |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
BUL58D | STMICROELECTRONICS |
获取价格 |
HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR | |
BUL58D_01 | STMICROELECTRONICS |
获取价格 |
HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR | |
BUL59 | STMICROELECTRONICS |
获取价格 |
HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR | |
BUL59 | ISC |
获取价格 |
Silicon NPN Power Transistor | |
BUL62A | SEME-LAB |
获取价格 |
ADVANCED DISTRIBUTED BASE DESIGN HIGH VOLTAGE HIGH SPEED NPN SILICON POWER TRANSISTOR | |
BUL62B | SEME-LAB |
获取价格 |
ADVANCED DISTRIBUTED BASE DESIGN HIGH VOLTAGE HIGH SPEED NPN SILICON POWER TRANSISTOR | |
BUL63A | SEME-LAB |
获取价格 |
ADVANCED DISTRIBUTED BASE DESIGN | |
BUL63B | SEME-LAB |
获取价格 |
ADVANCED DISTRIBUTED BASE DESIGN HIGH VOLTAGE HIGH SPEED NPN SILICON POWER TRANSISTOR | |
BUL642D2 | ONSEMI |
获取价格 |
High Speed, High Gain Bipolar NPN Transistor with Integrated Collector−Emitter and B | |
BUL642D2G | ONSEMI |
获取价格 |
High Speed, High Gain Bipolar NPN Transistor with Integrated Collector−Emitter and B |