Datasheet > BUL56B

BUL56B

更新时间： 2024-09-26 06:44:39

品牌	Logo	应用领域
SAVANTIC		晶体晶体管
页数	文件大小	规格书
3页	92K
描述
Silicon NPN Power Transistors

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中文翻译

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数据手册

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BUL56B 数据手册

SavantIC Semiconductor

Product Specification

Silicon NPN Power Transistors

BUL56B

DESCRIPTION

·With TO-220C package

·High voltage

·Fast switching

·High energy rating

APPLICATIONS

·Designed for use in electronic

ballast applications

PINNING

DESCRIPTION

Base

Collector;connected to

mounting base

emitter

Absolute maximum ratings (Ta=25ꢀ )

SYMBOL

V_CBO

V_CEO

V_EBO

I_C

PARAMETER

Collector-base voltage

Collector-emitter voltage

Emitter-base voltage

CONDITIONS

Open emitter

VALUE

250

100

UNIT

Open base

Open collector

Collector current (DC)

Collector current-Peak

Base current

I_CM

I_B

P_tot

Total power dissipation

Operating and storage temperature

T_C=25ꢀ

ꢀ

T_stg

-55~150

12 3

中文翻译

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与BUL56B相关器件

型号	品牌	获取价格	描述	数据表
BUL56BSMD	SEME-LAB	获取价格	NPN FAST SWITCHING TRANSISTOR
BUL57	STMICROELECTRONICS	获取价格	HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTORS
BUL57A	SEME-LAB	获取价格	ADVANCED DISTRIBUTED BASE DESIGN HIGH VOLTAGE HIGH SPEED NPN SILICON POWER TRANSISTOR
BUL57ASMD	SEME-LAB	获取价格	Bipolar NPN Device in a Hermetically sealed
BUL57FP	STMICROELECTRONICS	获取价格	HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTORS
BUL57PI	ETC	获取价格	TRANSISTOR \| BJT \| NPN \| 400V V(BR)CEO \| 7A I(C) \| SOT-186
BUL58	SEME-LAB	获取价格	ADVANCED DISTRIBUTED BASE DESIGN HIGH VOLTAGE HIGH SPEED NPN SILICON POWER TRANSISTOR
BUL58A	SEME-LAB	获取价格	ADVANCED DISTRIBUTED BASE DESIGN HIGH VOLTAGE HIGH SPEED NPN SILICON POWER TRANSISTOR
BUL58ASMD	SEME-LAB	获取价格	Bipolar NPN Device in a Hermetically sealed
BUL58B	SEME-LAB	获取价格	ADVANCED DISTRIBUTED BASE DESIGN HIGH VOLTAGE HIGH SPEED NPN SILICON POWER TRANSISTOR