Datasheet > BUL52

BUL52

更新时间： 2024-09-25 22:17:31

品牌	Logo	应用领域
SEME-LAB		晶体晶体管高压
页数	文件大小	规格书
2页	23K
描述
ADVANCED DISTRIBUTED BASE DESIGN HIGH VOLTAGE HIGH SPEED NPN SILICON POWER TRANSISTOR

阅读下载

中文翻译

获取价格

数据手册

如果您发现信息不准确，欢迎纠错

BUL52 数据手册

BUL52B

SEME

LAB

ADVANCED

DISTRIBUTED BASE DESIGN

HIGH VOLTAGE

MECHANICAL DATA

Dimensions in mm

HIGH SPEED NPN

SILICON POWER TRANSISTOR

10.2

4.5

1.3

3.6 Dia.

Designed for use in

electronic ballast applications

• SEMEFAB DESIGNED AND DIFFUSED DIE

• HIGH VOLTAGE

2 3

1.3

• FAST SWITCHING

• HIGH ENERGY RATING

0.85

• MILITARY AND HI–REL VERSIONS

AVAILABLE IN METAL AND CERAMIC

SURFACE MOUNT PACKAGES

0.5

2.54 2.54

FEATURES

• Multi–base for efficient energy distribution

across the chip resulting in significantly

improved switching and energy ratings

across full temperature range.

TO220

Pin 2 – Collector

Pin 1 – Base

Pin 3 – Emitter

• Ion implant and high accuracy masking for

tight control of characteristics from batch to

batch.

• Triple Guard Rings for improved control of

high voltages.

ABSOLUTE MAXIMUM RATINGS (T

= 25°C unless otherwise stated)

800V

case

Collector – Base Voltage

Collector – Emitter Voltage (I = 0)

CBO

CEO

EBO

400V

Emitter – Base Voltage (I = 0)

10V

Continuous Collector Current

Peak Collector Current

Base Current

12A

C(PK)

Total Dissipation at T

= 25°C

100W

tot

case

Operating and Storage Temperature Range

–55 to +150°C

stg

Prelim. 3/95

Semelab plc. Telephone (01455) 556565. Telex: 341927. Fax (01455) 552612.

中文翻译

下载PDF

与BUL52相关器件

型号	品牌	获取价格	描述	数据表
BUL52A	SEME-LAB	获取价格	ADVANCED DISTRIBUTED BASE DESIGN HIGH VOLTAGE HIGH SPEED NPN SILICON POWER TRANSISTOR
BUL52AFI	SEME-LAB	获取价格	ADVANCED DISTRIBUTED BASE DESIGN HIGH VOLTAGE HIGH SPEED NPN SILICON POWER TRANSISTOR
BUL52ASMD	SEME-LAB	获取价格	Bipolar NPN Device in a Hermetically sealed
BUL52B	SAVANTIC	获取价格	Silicon PNP Power Transistors
BUL52B	JMNIC	获取价格	Silicon Power Transistors
BUL52B	SEME-LAB	获取价格	ADVANCED DISTRIBUTED BASE DESIGN HIGH VOLTAGE HIGH SPEED NPN SILICON POWER TRANSISTOR
BUL52BFI	SEME-LAB	获取价格	ADVANCED DISTRIBUTED BASE DESIGN HIGH VOLTAGE HIGH SPEED NPN SILICON POWER TRANSISTOR
BUL52BSMD	SEME-LAB	获取价格	Bipolar NPN Device in a Hermetically sealed
BUL53A	SEME-LAB	获取价格	ADVANCED DISTRIBUTED BASE DESIGN HIGH VOLTAGE HIGH SPEED NPN SILICON POWER TRANSISTOR
BUL53ASMD	SEME-LAB	获取价格	Bipolar NPN Device in a Hermetically sealed