Datasheet > BUL52AFI

BUL52AFI

更新时间： 2024-11-13 22:17:31

品牌	Logo	应用领域
SEME-LAB		晶体晶体管高压
页数	文件大小	规格书
4页	67K
描述
ADVANCED DISTRIBUTED BASE DESIGN HIGH VOLTAGE HIGH SPEED NPN SILICON POWER TRANSISTOR

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BUL52AFI 数据手册

BUL52AFI

SEME

LAB

ADVANCED

DISTRIBUTED BASE DESIGN

HIGH VOLTAGE

MECHANICAL DATA

Dimensions in mm

HIGH SPEED NPN

10.2

SILICON POWER TRANSISTOR

Designed for use in

3.6 Dia.

electronic ballast applications

• SEMEFAB DESIGNED AND DIFFUSED DIE

• HIGH VOLTAGE

1.3

• FAST SWITCHING

• HIGH ENERGY RATING

0.85

FEATURES

• Multi–base for efficient energy distribution

across the chip resulting in significantly

improved switching and energy ratings

across full temperature range.

2.54 2.54

ISOLATED TO220

• Ion implant and high accuracy masking for

tight control of characteristics from batch to

batch.

Pin 1 – Base

Pin 2 – Collectorn

Pin3 – Emitter

• Triple Guard Rings for improved control of

high voltages.

ABSOLUTE MAXIMUM RATINGS (T

= 25°C unless otherwise stated)

1000V

case

Collector – Base Voltage

Collector – Emitter Voltage (I = 0)

CBO

CEO

EBO

500V

10V

Emitter – Base Voltage (I = 0)

Continuous Collector Current

Peak Collector Current

Base Current

10A

C(PK)

2.5A

Total Dissipation at T

= 25°C

45W

tot

case

Operating and Storage Temperature Range

–55 to 150°C

stg

Prelim. 3/97

Semelab plc. Telephone (01455) 556565. Telex: 341927. Fax (01455) 552612.

12 3 4

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