Datasheet > BUL52B

BUL52B

更新时间： 2024-11-14 06:44:39

品牌	Logo	应用领域
锦美电子 - JMNIC		晶体晶体管
页数	文件大小	规格书
3页	45K
描述
Silicon Power Transistors

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中文翻译

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数据手册

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BUL52B 数据手册

Product Specification

www.jmnic.com

Silicon Power Transistors

BUL52B

DESCRIPTION

·With TO-220C package

·High voltage

·Fast switching

·High energy rating

APPLICATIONS

·Designed for use in

electronic ballast applications

PINNING

DESCRIPTION

Base

Collector;connected to

mounting base

emitter

LIMITING VALUES

SYMBOL

PARAMETER

CONDITIONS

Open emitter

VALUE

UNIT

V_CBO

V_CEO

V_EBO

I_C

Collector-base voltage

Collector-emitter voltage

Emitter-base voltage

Collector current (DC)

Collector current-Peak

Base current

800

Open base

400

Open collector

I_CM

I_B

P_tot

T_stg

Total power dissipation

Storage temperature

T_C=25℃

100

℃

-55~150

JMnic

12 3

中文翻译

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与BUL52B相关器件

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BUL52BFI	SEME-LAB	获取价格	ADVANCED DISTRIBUTED BASE DESIGN HIGH VOLTAGE HIGH SPEED NPN SILICON POWER TRANSISTOR
BUL52BSMD	SEME-LAB	获取价格	Bipolar NPN Device in a Hermetically sealed
BUL53A	SEME-LAB	获取价格	ADVANCED DISTRIBUTED BASE DESIGN HIGH VOLTAGE HIGH SPEED NPN SILICON POWER TRANSISTOR
BUL53ASMD	SEME-LAB	获取价格	Bipolar NPN Device in a Hermetically sealed
BUL53B	SEME-LAB	获取价格	ADVANCED DISTRIBUTED BASE DESIGN HIGH VOLTAGE HIGH SPEED NPN SILICON POWER TRANSISTOR
BUL53BSMD	SEME-LAB	获取价格	ADVANCED DISTRIBUTED BASE DESIGN HIGH VOLTAGE, HIGH SPEED NPN SILICON POWER TRANSISTOR
BUL54	SEME-LAB	获取价格	ADVANCED DISTRIBUTED BASE DESIGN HIGH VOLTAGE HIGH SPEED NPN SILICON POWER TRANSISTOR
BUL54A	SEME-LAB	获取价格	ADVANCED DISTRIBUTED BASE DESIGN HIGH VOLTAGE HIGH SPEED NPN SILICON POWER TRANSISTOR
BUL54AFI	SEME-LAB	获取价格	ADVANCED DISTRIBUTED BASE DESIGN HIGH VOLTAGE HIGH SPEED NPN SILICON POWER TRANSISTOR
BUL54ASMD	SEME-LAB	获取价格	ADVANCED DISTRIBUTED BASE DESIGN HIGH VOLTAGE HIGH SPEED NPN SILICON POWER TRANSISTOR