是否无铅: | 含铅 | 是否Rohs认证: | 不符合 |
生命周期: | Obsolete | 零件包装代码: | TO-220AB |
包装说明: | FLANGE MOUNT, R-PSFM-T3 | 针数: | 3 |
Reach Compliance Code: | compliant | HTS代码: | 8541.29.00.95 |
风险等级: | 5.92 | 最大集电极电流 (IC): | 8 A |
集电极-发射极最大电压: | 400 V | 配置: | SINGLE |
最小直流电流增益 (hFE): | 10 | JEDEC-95代码: | TO-220AB |
JESD-30 代码: | R-PSFM-T3 | 元件数量: | 1 |
端子数量: | 3 | 封装主体材料: | PLASTIC/EPOXY |
封装形状: | RECTANGULAR | 封装形式: | FLANGE MOUNT |
峰值回流温度(摄氏度): | NOT SPECIFIED | 极性/信道类型: | NPN |
认证状态: | Not Qualified | 表面贴装: | NO |
端子形式: | THROUGH-HOLE | 端子位置: | SINGLE |
处于峰值回流温度下的最长时间: | NOT SPECIFIED | 晶体管应用: | SWITCHING |
晶体管元件材料: | SILICON | 标称过渡频率 (fT): | 20 MHz |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
BUL52BFI | SEME-LAB |
获取价格 |
ADVANCED DISTRIBUTED BASE DESIGN HIGH VOLTAGE HIGH SPEED NPN SILICON POWER TRANSISTOR | |
BUL52BSMD | SEME-LAB |
获取价格 |
Bipolar NPN Device in a Hermetically sealed | |
BUL53A | SEME-LAB |
获取价格 |
ADVANCED DISTRIBUTED BASE DESIGN HIGH VOLTAGE HIGH SPEED NPN SILICON POWER TRANSISTOR | |
BUL53ASMD | SEME-LAB |
获取价格 |
Bipolar NPN Device in a Hermetically sealed | |
BUL53B | SEME-LAB |
获取价格 |
ADVANCED DISTRIBUTED BASE DESIGN HIGH VOLTAGE HIGH SPEED NPN SILICON POWER TRANSISTOR | |
BUL53BSMD | SEME-LAB |
获取价格 |
ADVANCED DISTRIBUTED BASE DESIGN HIGH VOLTAGE, HIGH SPEED NPN SILICON POWER TRANSISTOR | |
BUL54 | SEME-LAB |
获取价格 |
ADVANCED DISTRIBUTED BASE DESIGN HIGH VOLTAGE HIGH SPEED NPN SILICON POWER TRANSISTOR | |
BUL54A | SEME-LAB |
获取价格 |
ADVANCED DISTRIBUTED BASE DESIGN HIGH VOLTAGE HIGH SPEED NPN SILICON POWER TRANSISTOR | |
BUL54AFI | SEME-LAB |
获取价格 |
ADVANCED DISTRIBUTED BASE DESIGN HIGH VOLTAGE HIGH SPEED NPN SILICON POWER TRANSISTOR | |
BUL54ASMD | SEME-LAB |
获取价格 |
ADVANCED DISTRIBUTED BASE DESIGN HIGH VOLTAGE HIGH SPEED NPN SILICON POWER TRANSISTOR |