Datasheet > BUL49A

BUL49A

更新时间： 2024-11-13 22:17:31

品牌	Logo	应用领域
SEME-LAB		晶体晶体管高压局域网
页数	文件大小	规格书
2页	20K
描述
ADVANCED DISTRIBUTED BASE DESIGN HIGH VOLTAGE HIGH SPEED NPN SILICON POWER TRANSISTOR

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BUL49A 数据手册

BUL49A

MECHANICAL DATA

ADVANCED

Dimensions in mm

40.01 (1.575)

DISTRIBUTED BASE DESIGN

HIGH VOLTAGE

Max.

HIGH SPEED NPN

SILICON POWER TRANSISTOR

26.67

(1.050)

Max.

4.47 (0.176)

Rad.

2 Pls.

• SEMEFAB DESIGNED AND DIFFUSED DIE

• HIGH VOLTAGE

22.23 (0.875)

Max.

11.43 (0.450)

6.35 (0.250)

• FAST SWITCHING

• HIGH ENERGY RATING

12.19 (0.48)

11.18 (0.44)

1.09 (0.043)

0.97 (0.038)

Dia.

1.63 (0.064)

1.52 (0.060)

• EFFICIENT POWER SWITCHING

• MILITARY AND HI–REL OPTIONS

• EXCEPTIONAL HIGH TEMPERATURE

PERFORMANCE

30.40 (1.197)

29.90 (1.177)

4.09 (0.161)

3.84 (0.151)

2 Pls

FEATURES

11.18 (0.440)

10.67 (0.420)

• Multi–base for efficient energy distribution

across the chip resulting in significantly

improved switching and energy ratings

across full temperature range.

• Ion implant and high accuracy masking for

tight control of characteristics from batch to

batch.

16.97 (0.668)

16.87 (0.664)

TO3

Pin 2 – Emitter

• Triple Guard Rings for improved control of

high voltages.

Pin 1 – Base

Case is Collector

ABSOLUTE MAXIMUM RATINGS (T

= 25°C unless otherwise stated)

case

Collector – Base Voltage

Collector – Emitter Voltage (I = 0)

600V

300V

CBO

CEO

EBO

Emitter – Base Voltage (I = 0)

10V

Continuous Collector Current

Peak Collector Current

25A

40A

C(PK)

Total Dissipation at T

= 25°C

200W

tot

case

Operating and Storage Temperature Range

Thermal Resistance (junction-case)

–65 to 175°C

Max. 0.7°CW

stg

Semelab plc. Telephone +44(0)1455) 556565. Fax +44(0)1455) 552612.

E-mail: sales@semelab.co.uk Website: http://www.semelab.co.uk

Prelim. 4/99

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