是否Rohs认证: | 符合 | 生命周期: | Transferred |
零件包装代码: | SOIC | 包装说明: | SMALL OUTLINE, R-PDSO-G20 |
针数: | 20 | Reach Compliance Code: | unknown |
ECCN代码: | EAR99 | 风险等级: | 5.76 |
雪崩能效等级(Eas): | 165 mJ | 配置: | SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE, CURRENT AND KELVIN SENSOR |
最小漏源击穿电压: | 65 V | 最大漏极电流 (ID): | 7.1 A |
最大漏源导通电阻: | 0.0398 Ω | FET 技术: | METAL-OXIDE SEMICONDUCTOR |
JEDEC-95代码: | MS-013AC | JESD-30 代码: | R-PDSO-G20 |
湿度敏感等级: | 3 | 元件数量: | 2 |
端子数量: | 20 | 工作模式: | ENHANCEMENT MODE |
最高工作温度: | 150 °C | 封装主体材料: | PLASTIC/EPOXY |
封装形状: | RECTANGULAR | 封装形式: | SMALL OUTLINE |
峰值回流温度(摄氏度): | 260 | 极性/信道类型: | N-CHANNEL |
最大脉冲漏极电流 (IDM): | 96.6 A | 认证状态: | Not Qualified |
表面贴装: | YES | 端子形式: | GULL WING |
端子位置: | DUAL | 处于峰值回流温度下的最长时间: | 30 |
晶体管应用: | SWITCHING | 晶体管元件材料: | SILICON |
Base Number Matches: | 1 |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
BUK9MNN-65PKK,518 | NXP |
获取价格 |
Dual TrenchPLUS FET Logic Level FET, SOT163-1 Package, Standard Markigg, Reel Dry Pack, SM | |
BUK9MPP-55PRR | NXP |
获取价格 |
Dual TrenchPLUS logic level FET | |
BUK9MPP-55PRR,518 | NXP |
获取价格 |
Dual TrenchPLUS logic level FET, SOT163-1 Package, Standard Markigg, Reel Dry Pack, SMD, 1 | |
BUK9MRR-65PKK | NXP |
获取价格 |
4.8A, 65V, 0.0746ohm, 2 CHANNEL, N-CHANNEL, Si, POWER, MOSFET, MS-013AC, PLASTIC, MS-013, | |
BUK9MRR-65PKK,518 | NXP |
获取价格 |
Dual TrenchPLUS FET Logic Level FET, SOT163-1 Package, Standard Markigg, Reel Dry Pack, SM | |
BUK9MTT-65PBB | NXP |
获取价格 |
3.8A, 65V, 0.1115ohm, 2 CHANNEL, N-CHANNEL, Si, POWER, MOSFET, MS-013AC, PLASTIC, MS-013, | |
BUK9MTT-65PBB,518 | NXP |
获取价格 |
Dual TrenchPLUS FET Logic Level FET, SOT163-1 Package, Standard Markigg, Reel Dry Pack, SM | |
BUK9V13-40H | NEXPERIA |
获取价格 |
Dual N-channel 40 V, 13 mOhm logic level MOSFET in LFPAK56D (half-bridge configuration)Pro | |
BUK9Y07-30B | NXP |
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N-channel TrenchMOS logic level FET | |
BUK9Y07-30B,115 | ETC |
获取价格 |
MOSFET N-CH 30V 75A LFPAK |