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BUK9MNN-65PKK PDF预览

BUK9MNN-65PKK

更新时间: 2024-11-23 21:19:51
品牌 Logo 应用领域
恩智浦 - NXP 开关脉冲光电二极管晶体管
页数 文件大小 规格书
18页 229K
描述
7.1A, 65V, 0.0398ohm, 2 CHANNEL, N-CHANNEL, Si, POWER, MOSFET, MS-013AC, PLASTIC, MS-013, SOP-20

BUK9MNN-65PKK 技术参数

是否Rohs认证: 符合生命周期:Transferred
零件包装代码:SOIC包装说明:SMALL OUTLINE, R-PDSO-G20
针数:20Reach Compliance Code:unknown
ECCN代码:EAR99风险等级:5.76
雪崩能效等级(Eas):165 mJ配置:SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE, CURRENT AND KELVIN SENSOR
最小漏源击穿电压:65 V最大漏极电流 (ID):7.1 A
最大漏源导通电阻:0.0398 ΩFET 技术:METAL-OXIDE SEMICONDUCTOR
JEDEC-95代码:MS-013ACJESD-30 代码:R-PDSO-G20
湿度敏感等级:3元件数量:2
端子数量:20工作模式:ENHANCEMENT MODE
最高工作温度:150 °C封装主体材料:PLASTIC/EPOXY
封装形状:RECTANGULAR封装形式:SMALL OUTLINE
峰值回流温度(摄氏度):260极性/信道类型:N-CHANNEL
最大脉冲漏极电流 (IDM):96.6 A认证状态:Not Qualified
表面贴装:YES端子形式:GULL WING
端子位置:DUAL处于峰值回流温度下的最长时间:30
晶体管应用:SWITCHING晶体管元件材料:SILICON
Base Number Matches:1

BUK9MNN-65PKK 数据手册

 浏览型号BUK9MNN-65PKK的Datasheet PDF文件第2页浏览型号BUK9MNN-65PKK的Datasheet PDF文件第3页浏览型号BUK9MNN-65PKK的Datasheet PDF文件第4页浏览型号BUK9MNN-65PKK的Datasheet PDF文件第5页浏览型号BUK9MNN-65PKK的Datasheet PDF文件第6页浏览型号BUK9MNN-65PKK的Datasheet PDF文件第7页 
BUK9MNN-65PKK  
Dual TrenchPLUS FET Logic Level FET  
Rev. 03 — 15 July 2010  
Product data sheet  
1. Product profile  
1.1 General description  
Dual N-channel enhancement mode field-effect power transistor in SO20. Device is  
manufactured using NXP High-Performance (HPA) TrenchPLUS technology, featuring  
very low on-state resistance, integrated current sensing transistors and over temperature  
protection diodes.  
1.2 Features and benefits  
„ Integrated current sensors  
„ Integrated temperature sensors  
1.3 Applications  
„ Lamp switching  
„ Power distribution  
„ Solenoid drivers  
„ Motor drive systems  
1.4 Quick reference data  
Table 1.  
Symbol  
Quick reference data  
Parameter  
Conditions  
Min Typ Max Unit  
FET1 and FET2 static characteristics  
RDSon  
drain-source on-state VGS = 5 V; ID = 5 A; Tj = 25 °C;  
resistance see Figure 16; see Figure 17  
-
30.6 36  
2242 2491 2740 A/A  
65  
m  
ID/Isense  
V(BR)DSS  
ratio of drain current to Tj = 25 °C; VGS = 5 V;  
sense current  
see Figure 18  
drain-source  
breakdown voltage  
ID = 250 µA; VGS = 0 V;  
Tj = 25 °C  
-
-
V
 
 
 
 
 

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