Datasheet > BUK9MNN-65PKK,518

BUK9MNN-65PKK,518

更新时间： 2024-11-23 20:03:51

品牌	Logo	应用领域
恩智浦 - NXP		/
页数	文件大小	规格书
18页	229K
描述
Dual TrenchPLUS FET Logic Level FET, SOT163-1 Package, Standard Markigg, Reel Dry Pack, SMD, 13"

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技术参数
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BUK9MNN-65PKK,518 技术参数

Source Url Status Check Date：	2013-06-14 00:00:00	是否Rohs认证：	符合
生命周期：	Obsolete	Reach Compliance Code：	compliant
风险等级：	5.84	Base Number Matches：	1

BUK9MNN-65PKK,518 数据手册

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BUK9MNN-65PKK

Dual TrenchPLUS FET Logic Level FET

Rev. 03 — 15 July 2010

Product data sheet

1. Product profile

1.1 General description

Dual N-channel enhancement mode field-effect power transistor in SO20. Device is

manufactured using NXP High-Performance (HPA) TrenchPLUS technology, featuring

very low on-state resistance, integrated current sensing transistors and over temperature

protection diodes.

1.2 Features and benefits

Integrated current sensors

Integrated temperature sensors

1.3 Applications

Lamp switching

Power distribution

Solenoid drivers

Motor drive systems

1.4 Quick reference data

Table 1.

Symbol

Quick reference data

Parameter

Conditions

Min Typ Max Unit

FET1 and FET2 static characteristics

R_DSon

drain-source on-state V_GS= 5 V; I_D= 5 A; T_j= 25 °C;

resistance see Figure 16; see Figure 17

30.6 36

2242 2491 2740 A/A

mΩ

I_D/I_sense

V_(BR)DSS

ratio of drain current to T_j= 25 °C; V_GS= 5 V;

sense current

see Figure 18

drain-source

breakdown voltage

I_D= 250 µA; V_GS= 0 V;

T_j= 25 °C

12 3 4 5 6 7...18

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