Datasheet > BUK9MNN-65PKK,518

BUK9MNN-65PKK,518

更新时间： 2024-10-01 20:03:51

品牌	Logo	应用领域
恩智浦 - NXP		/
页数	文件大小	规格书
18页	229K
描述
Dual TrenchPLUS FET Logic Level FET, SOT163-1 Package, Standard Markigg, Reel Dry Pack, SMD, 13"

阅读下载

中文翻译

获取价格

技术参数
数据手册

如果您发现信息不准确，欢迎纠错

BUK9MNN-65PKK,518 技术参数

Source Url Status Check Date：	2013-06-14 00:00:00	是否Rohs认证：	符合
生命周期：	Obsolete	Reach Compliance Code：	compliant
风险等级：	5.84	Base Number Matches：	1

BUK9MNN-65PKK,518 数据手册

浏览型号BUK9MNN-65PKK,518的Datasheet PDF文件第2页

浏览型号BUK9MNN-65PKK,518的Datasheet PDF文件第3页

浏览型号BUK9MNN-65PKK,518的Datasheet PDF文件第4页

浏览型号BUK9MNN-65PKK,518的Datasheet PDF文件第5页

浏览型号BUK9MNN-65PKK,518的Datasheet PDF文件第6页

BUK9MNN-65PKK

Dual TrenchPLUS FET Logic Level FET

Rev. 03 — 15 July 2010

Product data sheet

1. Product profile

1.1 General description

Dual N-channel enhancement mode field-effect power transistor in SO20. Device is

manufactured using NXP High-Performance (HPA) TrenchPLUS technology, featuring

very low on-state resistance, integrated current sensing transistors and over temperature

protection diodes.

1.2 Features and benefits

Integrated current sensors

Integrated temperature sensors

1.3 Applications

Lamp switching

Power distribution

Solenoid drivers

Motor drive systems

1.4 Quick reference data

Table 1.

Symbol

Quick reference data

Parameter

Conditions

Min Typ Max Unit

FET1 and FET2 static characteristics

R_DSon

drain-source on-state V_GS= 5 V; I_D= 5 A; T_j= 25 °C;

resistance see Figure 16; see Figure 17

30.6 36

2242 2491 2740 A/A

mΩ

I_D/I_sense

V_(BR)DSS

ratio of drain current to T_j= 25 °C; V_GS= 5 V;

sense current

see Figure 18

drain-source

breakdown voltage

I_D= 250 µA; V_GS= 0 V;

T_j= 25 °C

12 3 4 5 6 7...18

中文翻译

下载PDF

与BUK9MNN-65PKK,518相关器件

型号	品牌	获取价格	描述	数据表
BUK9MPP-55PRR	NXP	获取价格	Dual TrenchPLUS logic level FET
BUK9MPP-55PRR,518	NXP	获取价格	Dual TrenchPLUS logic level FET, SOT163-1 Package, Standard Markigg, Reel Dry Pack, SMD, 1
BUK9MRR-65PKK	NXP	获取价格	4.8A, 65V, 0.0746ohm, 2 CHANNEL, N-CHANNEL, Si, POWER, MOSFET, MS-013AC, PLASTIC, MS-013,
BUK9MRR-65PKK,518	NXP	获取价格	Dual TrenchPLUS FET Logic Level FET, SOT163-1 Package, Standard Markigg, Reel Dry Pack, SM
BUK9MTT-65PBB	NXP	获取价格	3.8A, 65V, 0.1115ohm, 2 CHANNEL, N-CHANNEL, Si, POWER, MOSFET, MS-013AC, PLASTIC, MS-013,
BUK9MTT-65PBB,518	NXP	获取价格	Dual TrenchPLUS FET Logic Level FET, SOT163-1 Package, Standard Markigg, Reel Dry Pack, SM
BUK9V13-40H	NEXPERIA	获取价格	Dual N-channel 40 V, 13 mOhm logic level MOSFET in LFPAK56D (half-bridge configuration)Pro
BUK9Y07-30B	NXP	获取价格	N-channel TrenchMOS logic level FET
BUK9Y07-30B,115	ETC	获取价格	MOSFET N-CH 30V 75A LFPAK
BUK9Y09-40B	NXP	获取价格	N-channel TrenchMOS logic level FET