Datasheet > BUK9Y104-100B,115

BUK9Y104-100B,115

更新时间： 2024-11-26 19:50:19

品牌	Logo	应用领域
恩智浦 - NXP		/
页数	文件大小	规格书
14页	173K
描述
N-channel TrenchMOS logic level FET SOIC 4-Pin

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BUK9Y104-100B,115 技术参数

是否Rohs认证：	符合	生命周期：	Transferred
零件包装代码：	SOIC	针数：	4
Reach Compliance Code：	not_compliant	风险等级：	5.74
Base Number Matches：	1

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BUK9Y104-100B

N-channel TrenchMOS logic level FET

Rev. 04 — 7 April 2010

Product data sheet

1. Product profile

1.1 General description

Logic level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic

package using TrenchMOS technology. This product has been designed and qualified to

the appropriate AEC standard for use in automotive critical applications.

1.2 Features and benefits

Low conduction losses due to low

Suitable for logic level gate drive

on-state resistance

sources

Q101 compliant

Suitable for thermally demanding

environments due to 175 °C rating

1.3 Applications

12 V, 24 V and 42 V loads

Automotive systems

DC-to-DC converters

General purpose power switching

Solenoid drivers

1.4 Quick reference data

Table 1.

Symbol

V_DS

Quick reference data

Parameter

Conditions

Min Typ Max Unit

drain-source

voltage

T_j≥ 25 °C; T_j≤ 175 °C

100

14.8

I_D

drain current

V_GS= 5 V; T_mb= 25 °C;

see Figure 1; see Figure 3

P_tot

total power

dissipation

T_mb= 25 °C

Static characteristics

R_DSondrain-source

V_GS= 10 V; I_D= 5 A; T_j= 25 °C

mΩ

on-state

resistance

V_GS= 5 V; I_D= 5 A; T_j= 25 °C;

see Figure 11; see Figure 12

104 mΩ

Avalanche ruggedness

E_DS(AL)S

non-repetitive

drain-source

I_D= 14.8 A; V_sup≤ 100 V;

R_GS= 50 Ω; V_GS= 5 V;

avalanche energy T_j(init)= 25 °C; unclamped

Dynamic characteristics

Q_GDgate-drain charge V_GS= 5 V; I_D= 5 A;

V_DS= 80 V; see Figure 13

4.7

12 3 4 5 6 7...14

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