Datasheet > BUK9Y07-30B,115

BUK9Y07-30B,115

更新时间： 2024-11-26 22:57:19

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其他 - ETC		/
页数	文件大小	规格书
14页	973K
描述
MOSFET N-CH 30V 75A LFPAK

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BUK9Y07-30B,115 数据手册

BUK9Y07-30B

N-channel TrenchMOS logic level FET

Rev. 03 — 7 April 2010

Product data sheet

1. Product profile

1.1 General description

Logic level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic

package using TrenchMOS technology. This product has been designed and qualified to

the appropriate AEC standard for use in automotive critical applications.

1.2 Features and benefits

 Low conduction losses due to low

 Suitable for logic level gate drive

on-state resistance

sources

 Q101 compliant

 Suitable for thermally demanding

environments due to 175 °C rating

1.3 Applications

 12 V loads

 General purpose power switching

 Motors, lamps and solenoids

 Automotive systems

1.4 Quick reference data

Table 1.

Symbol

V_DS

Quick reference data

Parameter

Conditions

Min Typ Max Unit

drain-source

voltage

T_j≥ 25 °C; T_j≤ 175 °C

[1]

I_D

drain current

V_GS= 5 V; T_mb= 25 °C;

see Figure 1; see Figure 4

P_tot

total power

dissipation

T_mb= 25 °C; see Figure 2

105

Static characteristics

R_DSondrain-source

V_GS= 5 V; I_D= 25 A;

T_j= 25 °C; see Figure 12;

see Figure 13

4.9

mΩ

on-state

resistance

V_GS= 10 V; I_D= 25 A;

T_j= 25 °C

Avalanche ruggedness

12 3 4 5 6 7...14

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