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BUK9MTT-65PBB PDF预览

BUK9MTT-65PBB

更新时间: 2024-11-26 19:27:43
品牌 Logo 应用领域
恩智浦 - NXP 开关脉冲光电二极管晶体管
页数 文件大小 规格书
16页 183K
描述
3.8A, 65V, 0.1115ohm, 2 CHANNEL, N-CHANNEL, Si, POWER, MOSFET, MS-013AC, PLASTIC, MS-013, SOP-20

BUK9MTT-65PBB 技术参数

是否Rohs认证: 符合生命周期:Transferred
零件包装代码:SOIC包装说明:SMALL OUTLINE, R-PDSO-G20
针数:20Reach Compliance Code:unknown
ECCN代码:EAR99风险等级:5.76
雪崩能效等级(Eas):0.036 mJ配置:SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE, CURRENT AND KELVIN SENSOR
最小漏源击穿电压:65 V最大漏极电流 (ID):3.8 A
最大漏源导通电阻:0.1115 ΩFET 技术:METAL-OXIDE SEMICONDUCTOR
JEDEC-95代码:MS-013ACJESD-30 代码:R-PDSO-G20
湿度敏感等级:3元件数量:2
端子数量:20工作模式:ENHANCEMENT MODE
最高工作温度:150 °C封装主体材料:PLASTIC/EPOXY
封装形状:RECTANGULAR封装形式:SMALL OUTLINE
峰值回流温度(摄氏度):260极性/信道类型:N-CHANNEL
最大脉冲漏极电流 (IDM):32.4 A认证状态:Not Qualified
表面贴装:YES端子形式:GULL WING
端子位置:DUAL处于峰值回流温度下的最长时间:30
晶体管应用:SWITCHING晶体管元件材料:SILICON
Base Number Matches:1

BUK9MTT-65PBB 数据手册

 浏览型号BUK9MTT-65PBB的Datasheet PDF文件第2页浏览型号BUK9MTT-65PBB的Datasheet PDF文件第3页浏览型号BUK9MTT-65PBB的Datasheet PDF文件第4页浏览型号BUK9MTT-65PBB的Datasheet PDF文件第5页浏览型号BUK9MTT-65PBB的Datasheet PDF文件第6页浏览型号BUK9MTT-65PBB的Datasheet PDF文件第7页 
BUK9MTT-65PBB  
Dual TrenchPLUS FET Logic Level FET  
Rev. 02 — 17 June 2010  
Product data sheet  
1. Product profile  
1.1 General description  
Dual N-channel enhancement mode field-effect power transistor in SO20. Device is  
manufactured using NXP High-Performance (HPA) TrenchPLUS technology, featuring  
very low on-state resistance, integrated current sensing transistors and over temperature  
protection diodes.  
1.2 Features and benefits  
Integrated current sensors  
Integrated temperature sensors  
1.3 Applications  
Lamp switching  
Power distribution  
Solenoid drivers  
Motor drive systems  
1.4 Quick reference data  
Table 1.  
Symbol  
Quick reference data  
Parameter Conditions  
Min Typ Max Unit  
FET1 and FET2 static characteristics  
RDSon  
drain-source  
on-state  
VGS = 5 V; ID = 3 A; Tj = 25 °C;  
see Figure 13; see Figure 14  
-
85  
100 m  
resistance  
ID/Isense  
ratio of drain  
current to sense  
current  
Tj = 25 °C; VGS = 5 V;  
see Figure 15  
900 1000 1100 A/A  
V(BR)DSS  
drain-source  
breakdown  
voltage  
ID = 250 µA; VGS = 0 V;  
Tj = 25 °C  
65  
-
-
V
 
 
 
 
 

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