Datasheet > BUK9MTT-65PBB,518

BUK9MTT-65PBB,518

更新时间： 2024-11-23 19:44:59

品牌	Logo	应用领域
恩智浦 - NXP		/
页数	文件大小	规格书
16页	183K
描述
Dual TrenchPLUS FET Logic Level FET, SOT163-1 Package, Standard Markigg, Reel Dry Pack, SMD, 13"

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BUK9MTT-65PBB,518 技术参数

Source Url Status Check Date：	2013-06-14 00:00:00	是否Rohs认证：	符合
生命周期：	Obsolete	Reach Compliance Code：	compliant
风险等级：	5.84	Base Number Matches：	1

BUK9MTT-65PBB,518 数据手册

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BUK9MTT-65PBB

Dual TrenchPLUS FET Logic Level FET

Rev. 02 — 17 June 2010

Product data sheet

1. Product profile

1.1 General description

Dual N-channel enhancement mode field-effect power transistor in SO20. Device is

manufactured using NXP High-Performance (HPA) TrenchPLUS technology, featuring

very low on-state resistance, integrated current sensing transistors and over temperature

protection diodes.

1.2 Features and benefits

 Integrated current sensors

 Integrated temperature sensors

1.3 Applications

 Lamp switching

 Power distribution

 Solenoid drivers

 Motor drive systems

1.4 Quick reference data

Table 1.

Symbol

Quick reference data

Parameter Conditions

Min Typ Max Unit

FET1 and FET2 static characteristics

R_DSon

drain-source

on-state

V_GS= 5 V; I_D= 3 A; T_j= 25 °C;

see Figure 13; see Figure 14

100 mΩ

resistance

I_D/I_sense

ratio of drain

current to sense

current

T_j= 25 °C; V_GS= 5 V;

see Figure 15

900 1000 1100 A/A

V_(BR)DSS

drain-source

breakdown

voltage

I_D= 250 µA; V_GS= 0 V;

T_j= 25 °C

12 3 4 5 6 7...16

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