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BUK9Y07-30B PDF预览

BUK9Y07-30B

更新时间: 2024-11-23 06:44:39
品牌 Logo 应用领域
恩智浦 - NXP 晶体晶体管开关脉冲
页数 文件大小 规格书
14页 345K
描述
N-channel TrenchMOS logic level FET

BUK9Y07-30B 技术参数

是否Rohs认证: 符合生命周期:Transferred
包装说明:PLASTIC, LFPAK-4针数:235
Reach Compliance Code:unknownECCN代码:EAR99
风险等级:5.73其他特性:LOGIC LEVEL COMPATIBLE
雪崩能效等级(Eas):198 mJ外壳连接:DRAIN
配置:SINGLE WITH BUILT-IN DIODE最小漏源击穿电压:30 V
最大漏极电流 (ID):75 A最大漏源导通电阻:0.008 Ω
FET 技术:METAL-OXIDE SEMICONDUCTORJEDEC-95代码:MO-235
JESD-30 代码:R-PSSO-G4JESD-609代码:e3
湿度敏感等级:1元件数量:1
端子数量:4工作模式:ENHANCEMENT MODE
最高工作温度:175 °C封装主体材料:PLASTIC/EPOXY
封装形状:RECTANGULAR封装形式:SMALL OUTLINE
峰值回流温度(摄氏度):260极性/信道类型:N-CHANNEL
最大脉冲漏极电流 (IDM):356 A认证状态:Not Qualified
表面贴装:YES端子面层:TIN
端子形式:GULL WING端子位置:SINGLE
处于峰值回流温度下的最长时间:30晶体管应用:SWITCHING
晶体管元件材料:SILICONBase Number Matches:1

BUK9Y07-30B 数据手册

 浏览型号BUK9Y07-30B的Datasheet PDF文件第2页浏览型号BUK9Y07-30B的Datasheet PDF文件第3页浏览型号BUK9Y07-30B的Datasheet PDF文件第4页浏览型号BUK9Y07-30B的Datasheet PDF文件第5页浏览型号BUK9Y07-30B的Datasheet PDF文件第6页浏览型号BUK9Y07-30B的Datasheet PDF文件第7页 
BUK9Y07-30B  
N-channel TrenchMOS logic level FET  
Rev. 03 — 7 April 2010  
Product data sheet  
1. Product profile  
1.1 General description  
Logic level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic  
package using TrenchMOS technology. This product has been designed and qualified to  
the appropriate AEC standard for use in automotive critical applications.  
1.2 Features and benefits  
Low conduction losses due to low  
Suitable for logic level gate drive  
on-state resistance  
sources  
Q101 compliant  
Suitable for thermally demanding  
environments due to 175 °C rating  
1.3 Applications  
12 V loads  
General purpose power switching  
Motors, lamps and solenoids  
Automotive systems  
1.4 Quick reference data  
Table 1.  
Symbol  
VDS  
Quick reference data  
Parameter  
Conditions  
Min Typ Max Unit  
drain-source  
voltage  
Tj 25 °C; Tj 175 °C  
-
-
-
-
-
-
30  
V
[1]  
ID  
drain current  
VGS = 5 V; Tmb = 25 °C;  
75  
A
see Figure 1; see Figure 4  
Ptot  
total power  
dissipation  
Tmb = 25 °C; see Figure 2  
105  
W
Static characteristics  
RDSon drain-source  
VGS = 5 V; ID = 25 A;  
Tj = 25 °C; see Figure 12;  
see Figure 13  
-
-
4.9  
4
7
6
mΩ  
mΩ  
on-state  
resistance  
VGS = 10 V; ID = 25 A;  
Tj = 25 °C  
Avalanche ruggedness  

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