Datasheet > BUK9Y09-40B,115

BUK9Y09-40B,115

更新时间： 2024-10-01 20:41:19

品牌	Logo	应用领域
恩智浦 - NXP		/
页数	文件大小	规格书
14页	175K
描述
N-channel TrenchMOS logic level FET SOIC 4-Pin

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技术参数
数据手册

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BUK9Y09-40B,115 技术参数

是否Rohs认证：	符合	生命周期：	Transferred
零件包装代码：	SOIC	针数：	4
Reach Compliance Code：	not_compliant	风险等级：	5.75
Base Number Matches：	1

BUK9Y09-40B,115 数据手册

BUK9Y09-40B

N-channel TrenchMOS logic level FET

Rev. 04 — 7 April 2010

Product data sheet

1. Product profile

1.1 General description

Logic level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic

package using TrenchMOS technology. This product has been designed and qualified to

the appropriate AEC standard for use in automotive critical applications.

1.2 Features and benefits

Low conduction losses due to low

Suitable for logic level gate drive

on-state resistance

sources

Q101 compliant

Suitable for thermally demanding

environments due to 175 °C rating

1.3 Applications

12 V loads

General purpose power switching

Motors, lamps and solenoids

Automotive systems

1.4 Quick reference data

Table 1. Quick reference data

Symbol

Parameter

Conditions

Min Typ Max Unit

V_DS

drain-source

voltage

T_j≥ 25 °C; T_j≤ 175 °C

I_D

drain current

V_GS= 5 V; T_mb= 25 °C;

see Figure 1; see Figure 4

P_tot

total power

dissipation

T_mb= 25 °C; see Figure 2

105.

Static characteristics

R_DSondrain-source

V_GS= 5 V; I_D= 25 A;

T_j= 25 °C; see Figure 11;

see Figure 12

6.9

5.8

mΩ

on-state

resistance

V_GS= 10 V; I_D= 25 A;

T_j= 25 °C

12 3 4 5 6 7...14

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