Datasheet > BUK9Y13-60EL

BUK9Y13-60EL

更新时间： 2024-11-24 11:12:27

品牌	Logo	应用领域
安世 - NEXPERIA		/
页数	文件大小	规格书
12页	309K
描述
Single N-channel 60 V, 7.9 mOhm logic level MOSFET in LFPAK56 using Enhanced SOA technologyProduction

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BUK9Y13-60EL 数据手册

BUK9Y13-60EL

Single N-channel 60 V, 7.9 mOhm logic level MOSFET in

LFPAK56 using Enhanced SOA technology

20 April 2022

Product data sheet

1. General description

Single, logic level, N-channel MOSFET in LFPAK56 using Application specific (ASFET) Enhanced

SOA technology. This product has been designed and qualified to AEC-Q101 for use in linear

mode in airbag applications.

2. Features and benefits

•

Fully automotive qualified to AEC-Q101 at 175 °C

•

Enhanced SOA technology for improved linear mode performance

LFPAK copper clip package technology:

•

High robustness and current handling capability

Gull wing leads for easy AOI inspection and exceptional board level reliability

3. Applications

•

12 V automotive systems

Airbag squib voltage regulator MOSFET

4. Quick reference data

Table 1. Quick reference data

Symbol

V_DS

Parameter

Conditions

Min

Typ

Max

Unit

drain-source voltage

drain current

25 °C ≤ T_j≤ 175 °C

V_GS= 10 V; T_mb= 25 °C; Fig. 2

I_D

[1]

P_tot

total power dissipation T_mb= 25 °C; Fig. 1

147

Static characteristics

R_DSondrain-source on-state

resistance

Dynamic characteristics

Q_GDgate-drain charge

V_GS= 10 V; I_D= 20 A; T_j= 25 °C;

Fig. 13

4.4

6.3

7.9

mΩ

I_D= 20 A; V_DS= 48 V; V_GS= 4.5 V;

T_j= 25 °C; Fig. 15; Fig. 16

11.7

23.3

[1] 90 A continuous current has been successfully demonstrated during application tests. Practically the current will be limited by PCB,

thermal design and operating temperature.

12 3 4 5 6 7...12

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