Datasheet > BUK9Y22-30B

BUK9Y22-30B

更新时间： 2024-02-23 16:24:49

品牌	Logo	应用领域
恩智浦 - NXP		/
页数	文件大小	规格书
14页	191K
描述
N-channel TrenchMOS logic level FET

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BUK9Y22-30B 数据手册

BUK9Y22-30B

N-channel TrenchMOS logic level FET

Rev. 04 — 7 April 2010

Product data sheet

1. Product profile

1.1 General description

Logic level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic

package using TrenchMOS technology. This product has been designed and qualified to

the appropriate AEC standard for use in automotive critical applications.

1.2 Features and benefits

Low conduction losses due to low

Suitable for logic level gate drive

on-state resistance

sources

Q101 compliant

Suitable for thermally demanding

environments due to 175 °C rating

1.3 Applications

12 V loads

General purpose power switching

Motors, lamps and solenoids

Automotive systems

1.4 Quick reference data

Table 1.

Symbol

V_DS

Quick reference data

Parameter

Conditions

Min Typ Max Unit

drain-source

voltage

T_j≥ 25 °C; T_j≤ 175 °C

I_D

drain current

V_GS= 5 V; T_mb= 25 °C;

37.7

59.4

see Figure 1; see Figure 4

P_tot

total power

dissipation

T_mb= 25 °C; see Figure 2

Static characteristics

R_DSondrain-source

V_GS= 5 V; I_D= 20 A;

T_j= 25 °C; see Figure 12;

see Figure 13

mΩ

on-state

resistance

V_GS= 10 V; I_D= 20 A;

13.5 19

T_j= 25 °C

12 3 4 5 6 7...14

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