Datasheet > BUK9Y25-60E

BUK9Y25-60E

更新时间： 2024-11-27 11:12:27

品牌	Logo	应用领域
安世 - NEXPERIA		/
页数	文件大小	规格书
13页	736K
描述
N-channel 60 V, 25 mΩ logic level MOSFET in LFPAK56Production

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中文翻译

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技术参数
数据手册

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BUK9Y25-60E 技术参数

是否Rohs认证：	符合	生命周期：	Active
Reach Compliance Code：	not_compliant	风险等级：	5.72
JESD-609代码：	e3	湿度敏感等级：	1
峰值回流温度（摄氏度）：	260	端子面层：	Tin (Sn)
处于峰值回流温度下的最长时间：	30	Base Number Matches：	1

BUK9Y25-60E 数据手册

BUK9Y25-60E

N-channel 60 V, 25 mΩ logic level MOSFET in LFPAK56

7 May 2013

Product data sheet

1. General description

Logic level N-channel MOSFET in an LFPAK56 (Power SO8) package using TrenchMOS

technology. This product has been designed and qualified to AEC Q101 standard for use

in high performance automotive applications.

2. Features and benefits

Q101 compliant

Repetitive avalanche rated

Suitable for thermally demanding environments due to 175 °C rating

True logic level gate with V_GS(th)rating of greater than 0.5 V at 175 °C

•

3. Applications

12 V Automotive systems

Motors, lamps and solenoid control

Transmission control

•

Ultra high performance power switching

4. Quick reference data

Table 1.

Symbol

Quick reference data

Parameter

Conditions

Min

Typ

Max

Unit

V_DS

I_D

drain-source voltage

drain current

T_j≥ 25 °C; T_j≤ 175 °C

V_GS= 5 V; T_mb= 25 °C; Fig. 1

P_tot

total power dissipation T_mb= 25 °C; Fig. 2

Static characteristics

R_DSondrain-source on-state

resistance

Dynamic characteristics

Q_GDgate-drain charge

V_GS= 5 V; I_D= 10 A; T_j= 25 °C; Fig. 11

20.8

4.2

mΩ

V_GS= 5 V; I_D= 10 A; V_DS= 48 V;

T_j= 25 °C; Fig. 13; Fig. 14

12 3 4 5 6 7...13

中文翻译

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