是否Rohs认证: | 符合 | 生命周期: | Transferred |
包装说明: | PLASTIC, POWER, SOP-8, LFPAK56-4 | Reach Compliance Code: | unknown |
ECCN代码: | EAR99 | 风险等级: | 5.73 |
其他特性: | AVALANCHE RATED | 雪崩能效等级(Eas): | 25 mJ |
外壳连接: | DRAIN | 配置: | SINGLE WITH BUILT-IN DIODE |
最小漏源击穿电压: | 80 V | 最大漏极电流 (ID): | 24 A |
最大漏源导通电阻: | 0.045 Ω | FET 技术: | METAL-OXIDE SEMICONDUCTOR |
JEDEC-95代码: | MO-235 | JESD-30 代码: | R-PSSO-G4 |
JESD-609代码: | e3 | 湿度敏感等级: | 1 |
元件数量: | 1 | 端子数量: | 4 |
工作模式: | ENHANCEMENT MODE | 封装主体材料: | PLASTIC/EPOXY |
封装形状: | RECTANGULAR | 封装形式: | SMALL OUTLINE |
峰值回流温度(摄氏度): | 260 | 极性/信道类型: | N-CHANNEL |
最大脉冲漏极电流 (IDM): | 96 A | 参考标准: | AEC-Q101; IEC-60134 |
表面贴装: | YES | 端子面层: | PURE TIN |
端子形式: | GULL WING | 端子位置: | SINGLE |
处于峰值回流温度下的最长时间: | 30 | 晶体管应用: | SWITCHING |
晶体管元件材料: | SILICON | Base Number Matches: | 1 |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
BUK9Y41-80E,115 | NXP |
获取价格 |
BUK9Y41-80E - N-channel 80 V, 45 mΩ logic lev |
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BUK9Y43-60E | NXP |
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N-channel 60 V, 43 mΩ logic level MOSFET in |
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BUK9Y43-60E | NEXPERIA |
获取价格 |
N-channel 60 V, 43 mΩ logic level MOSFET in L |
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BUK9Y4R4-40E | NXP |
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N-channel 40 V, 4.4 mΩ logic level MOSFET in |
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BUK9Y4R4-40E | NEXPERIA |
获取价格 |
N-channel 40 V, 4.4 mΩ logic level MOSFET in |
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BUK9Y4R4-40E,115 | NXP |
获取价格 |
BUK9Y4R4-40E - N-channel 40 V, 4.4 mΩ logic l |
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BUK9Y4R8-60E | NXP |
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N-channel 60 V, 4.8 mΩ logic level MOSFET in |
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BUK9Y4R8-60E | NEXPERIA |
获取价格 |
N-channel 60 V, 4.8 mΩ logic level MOSFET in |
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BUK9Y53-100B | NXP |
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N-channel TrenchMOS logic level FET |
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BUK9Y53-100B | NEXPERIA |
获取价格 |
N-channel TrenchMOS logic level FETProduction |
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