是否Rohs认证: | 符合 | 生命周期: | Active |
Reach Compliance Code: | not_compliant | 风险等级: | 5.34 |
JESD-609代码: | e3 | 湿度敏感等级: | 1 |
峰值回流温度(摄氏度): | 260 | 端子面层: | Tin (Sn) |
处于峰值回流温度下的最长时间: | 30 | Base Number Matches: | 1 |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
BUK9Y4R4-40E,115 | NXP |
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BUK9Y4R4-40E - N-channel 40 V, 4.4 mΩ logic l |
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BUK9Y4R8-60E | NXP |
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N-channel 60 V, 4.8 mΩ logic level MOSFET in |
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BUK9Y4R8-60E | NEXPERIA |
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N-channel 60 V, 4.8 mΩ logic level MOSFET in |
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BUK9Y53-100B | NXP |
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N-channel TrenchMOS logic level FET |
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BUK9Y53-100B | NEXPERIA |
获取价格 |
N-channel TrenchMOS logic level FETProduction |
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BUK9Y53-100B,115 | NXP |
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BUK9Y53-100B - N-channel TrenchMOS logic level FET SOIC 4-Pin |
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BUK9Y58-75B | NXP |
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N-channel TrenchMOS logic level FET |
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BUK9Y58-75B | NEXPERIA |
获取价格 |
N-channel TrenchMOS logic level FETProduction |
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BUK9Y58-75B,115 | ETC |
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MOSFET N-CH 75V 20.73A LFPAK |
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BUK9Y59-60E | NEXPERIA |
获取价格 |
N-channel 60 V, 59 mΩ logic level MOSFET in L |
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