Datasheet > BUK9Y53-100B

BUK9Y53-100B

更新时间： 2024-11-29 06:44:39

品牌	Logo	应用领域
恩智浦 - NXP		/
页数	文件大小	规格书
12页	90K
描述
N-channel TrenchMOS logic level FET

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中文翻译

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BUK9Y53-100B 数据手册

BUK9Y53-100B

N-channel TrenchMOS logic level FET

Rev. 01 — 30 August 2007

Product data sheet

1. Product proﬁle

1.1 General description

N-channel enhancement mode power Field-Effect Transistor (FET) in a plastic package

using NXP High-Performance Automotive (HPA) TrenchMOS technology.

1.2 Features

I Very low on-state resistance

I Q101 compliant

I 175 °C rated

I Logic level compatible

1.3 Applications

I Automotive systems

I General purpose power switching

I 12 V, 24 V and 42 V loads

I Motors, lamps and solenoids

1.4 Quick reference data

I E_DS(AL)S≤ 85 mJ

I I_D≤ 23 A

I R_DSon= 45 mΩ (typ)

I P_tot≤ 75 W

2. Pinning information

Table 1.

Pinning

Description

Simpliﬁed outline

Symbol

1, 2, 3 source (S)

gate (G)

mounting base; connected to drain (D)

2 3 4

mbl798

S1 S2 S3

SOT669 (LFPAK)

12 3 4 5 6 7...12

中文翻译

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