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BUK9Y43-60E PDF预览

BUK9Y43-60E

更新时间: 2023-09-03 20:33:49
品牌 Logo 应用领域
安世 - NEXPERIA 局域网开关脉冲晶体管
页数 文件大小 规格书
13页 759K
描述
N-channel 60 V, 43 mΩ logic level MOSFET in LFPAK56Production

BUK9Y43-60E 技术参数

是否Rohs认证: 符合生命周期:Active
包装说明:SMALL OUTLINE, R-PSSO-G4Reach Compliance Code:not_compliant
风险等级:5.36其他特性:AVALANCHE RATED
雪崩能效等级(Eas):12.4 mJ外壳连接:DRAIN
配置:SINGLE WITH BUILT-IN DIODE最小漏源击穿电压:60 V
最大漏极电流 (ID):22 A最大漏源导通电阻:0.043 Ω
FET 技术:METAL-OXIDE SEMICONDUCTORJEDEC-95代码:MO-235
JESD-30 代码:R-PSSO-G4JESD-609代码:e3
湿度敏感等级:1元件数量:1
端子数量:4工作模式:ENHANCEMENT MODE
封装主体材料:PLASTIC/EPOXY封装形状:RECTANGULAR
封装形式:SMALL OUTLINE峰值回流温度(摄氏度):260
极性/信道类型:N-CHANNEL最大脉冲漏极电流 (IDM):86 A
参考标准:AEC-Q101; IEC-60134表面贴装:YES
端子面层:Tin (Sn)端子形式:GULL WING
端子位置:SINGLE处于峰值回流温度下的最长时间:30
晶体管应用:SWITCHING晶体管元件材料:SILICON
Base Number Matches:1

BUK9Y43-60E 数据手册

 浏览型号BUK9Y43-60E的Datasheet PDF文件第2页浏览型号BUK9Y43-60E的Datasheet PDF文件第3页浏览型号BUK9Y43-60E的Datasheet PDF文件第4页浏览型号BUK9Y43-60E的Datasheet PDF文件第5页浏览型号BUK9Y43-60E的Datasheet PDF文件第6页浏览型号BUK9Y43-60E的Datasheet PDF文件第7页 
BUK9Y43-60E  
N-channel 60 V, 43 mΩ logic level MOSFET in LFPAK56  
8 May 2013  
Product data sheet  
1. General description  
Logic level N-channel MOSFET in an LFPAK56 (Power SO8) package using TrenchMOS  
technology. This product has been designed and qualified to AEC Q101 standard for use  
in high performance automotive applications.  
2. Features and benefits  
Q101 compliant  
Repetitive avalanche rated  
Suitable for thermally demanding environments due to 175 °C rating  
True logic level gate with VGS(th) rating of greater than 0.5 V at 175 °C  
3. Applications  
12 V Automotive systems  
Motors, lamps and solenoid control  
Transmission control  
Ultra high performance power switching  
4. Quick reference data  
Table 1.  
Symbol  
Quick reference data  
Parameter  
Conditions  
Min  
Typ  
Max  
60  
Unit  
V
VDS  
ID  
drain-source voltage  
drain current  
Tj ≥ 25 °C; Tj ≤ 175 °C  
VGS = 5 V; Tmb = 25 °C; Fig. 1  
-
-
-
-
-
-
22  
A
Ptot  
total power dissipation Tmb = 25 °C; Fig. 2  
45  
W
Static characteristics  
RDSon drain-source on-state  
resistance  
Dynamic characteristics  
QGD gate-drain charge  
VGS = 5 V; ID = 5 A; Tj = 25 °C; Fig. 11  
-
-
35.8  
3.4  
43  
-
mΩ  
nC  
VGS = 5 V; ID = 5 A; VDS = 48 V;  
Tj = 25 °C; Fig. 13; Fig. 14  
 
 
 
 

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