是否Rohs认证: | 符合 | 生命周期: | Obsolete |
包装说明: | , | Reach Compliance Code: | unknown |
风险等级: | 5.84 | Is Samacsys: | N |
配置: | Single | 最大漏极电流 (Abs) (ID): | 18 A |
FET 技术: | METAL-OXIDE SEMICONDUCTOR | 工作模式: | ENHANCEMENT MODE |
最高工作温度: | 175 °C | 极性/信道类型: | N-CHANNEL |
最大功率耗散 (Abs): | 59 W | 子类别: | FET General Purpose Power |
表面贴装: | YES | Base Number Matches: | 1 |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
BUK9Y41-80E | NEXPERIA |
获取价格 |
N-channel 80 V, 45 mΩ logic level MOSFET in L |
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BUK9Y41-80E | NXP |
获取价格 |
N-channel 80 V, 45 mΩ logic level MOSFET in |
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BUK9Y41-80E,115 | NXP |
获取价格 |
BUK9Y41-80E - N-channel 80 V, 45 mΩ logic lev |
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BUK9Y43-60E | NXP |
获取价格 |
N-channel 60 V, 43 mΩ logic level MOSFET in |
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BUK9Y43-60E | NEXPERIA |
获取价格 |
N-channel 60 V, 43 mΩ logic level MOSFET in L |
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BUK9Y4R4-40E | NXP |
获取价格 |
N-channel 40 V, 4.4 mΩ logic level MOSFET in |
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BUK9Y4R4-40E | NEXPERIA |
获取价格 |
N-channel 40 V, 4.4 mΩ logic level MOSFET in |
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BUK9Y4R4-40E,115 | NXP |
获取价格 |
BUK9Y4R4-40E - N-channel 40 V, 4.4 mΩ logic l |
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BUK9Y4R8-60E | NXP |
获取价格 |
N-channel 60 V, 4.8 mΩ logic level MOSFET in |
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BUK9Y4R8-60E | NEXPERIA |
获取价格 |
N-channel 60 V, 4.8 mΩ logic level MOSFET in |
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