Datasheet > BUK9Y2R8-40H

BUK9Y2R8-40H

更新时间： 2024-10-03 11:11:51

品牌	Logo	应用领域
安世 - NEXPERIA		/
页数	文件大小	规格书
12页	262K
描述
N-channel 40 V, 2.8 mΩ logic level MOSFET in LFPAK56Production

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BUK9Y2R8-40H 数据手册

BUK9Y2R8-40H

N-channel 40 V, 2.8 mΩ logic level MOSFET in LFPAK56

31 May 2018

Product data sheet

1. General description

Automotive qualified N-channel MOSFET using the latest Trench 9 low ohmic superjunction

technology, housed in a robust LFPAK56 package. This product has been fully designed and

qualified to meet AEC-Q101 requirements delivering high performance and endurance.

2. Features and benefits

•

Fully automotive qualified to AEC-Q101:

175 °C rating suitable for thermally demanding environments

Trench 9 Superjunction technology:

•

Reduced cell pitch enables enhanced power density and efficiency with lower R_DSonin

same footprint

•

Improved SOA and avalanche capability compared to standard TrenchMOS

Tight V_GS(th)limits enable easy paralleling of MOSFETs

•

LFPAK Gull Wing leads:

•

High Board Level Reliability absorbing mechanical stress during thermal cycling, unlike

traditional QFN packages

•

Visual (AOI) soldering inspection, no need for expensive x-ray equipment

Easy solder wetting for good mechanical solder joint

•

LFPAK copper clip technology:

•

Improved reliability, with reduced R_thand R_DSon

Increases maximum current capability and improved current spreading

3. Applications

•

12 V automotive systems

Motors, lamps and solenoid control

Start-Stop micro-hybrid applications

Transmission control

Ultra high performance power switching

4. Quick reference data

Table 1. Quick reference data

Symbol

V_DS

Parameter

Conditions

Min

Typ

Max

Unit

drain-source voltage

drain current

25 °C ≤ T_j≤ 175 °C

V_GS= 10 V; T_mb= 25 °C

I_D

[1]

120

172

P_tot

total power dissipation T_mb= 25 °C; Fig. 1

12 3 4 5 6 7...12

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