Datasheet > BUK9Y19-100E

BUK9Y19-100E

更新时间： 2024-11-26 14:41:11

品牌	Logo	应用领域
恩智浦 - NXP		/
页数	文件大小	规格书
13页	319K
描述
TRANSISTOR POWER, FET, FET General Purpose Power

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技术参数
数据手册

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BUK9Y19-100E 技术参数

生命周期：	Transferred	包装说明：	,
Reach Compliance Code：	unknown	风险等级：	5.74
Is Samacsys：	N	Base Number Matches：	1

BUK9Y19-100E 数据手册

BUK9Y19-100E

N-channel 100 V, 19 mΩ logic level MOSFET in LFPAK56

6 November 2013

Product data sheet

1. General description

Logic level N-channel MOSFET in an LFPAK56 (Power SO8) package using TrenchMOS

technology. This product has been designed and qualified to AEC Q101 standard for use

in high performance automotive applications.

2. Applications

12 V, 24 V and 48 V Automotive systems

Motors, lamps and solenoid control

Transmission control

•

Ultra high performance power switching

3. Quick reference data

Table 1.

Symbol

Quick reference data

Parameter

Conditions

Min

Typ

Max

100

Unit

V_DS

I_D

drain-source voltage

drain current

T_j≥ 25 °C; T_j≤ 175 °C

V_GS= 5 V; T_mb= 25 °C; Fig. 1

P_tot

total power dissipation T_mb= 25 °C; Fig. 2

167

Static characteristics

R_DSondrain-source on-state

resistance

Dynamic characteristics

Q_GDgate-drain charge

V_GS= 5 V; I_D= 15 A; T_j= 25 °C; Fig. 11

14.6

14.1

mΩ

V_GS= 5 V; I_D= 15 A; V_DS= 80 V;

T_j= 25 °C; Fig. 13; Fig. 14

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