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BUK9Y14-80E

更新时间: 2024-11-26 12:51:43
品牌 Logo 应用领域
恩智浦 - NXP /
页数 文件大小 规格书
13页 352K
描述
N-channel 80 V,15 mΩ logic level MOSFET in LFPAK56

BUK9Y14-80E 数据手册

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K
A
P
BUK9Y14-80E  
N-channel 80 V,15 mΩ logic level MOSFET in LFPAK56  
F
L
20 February 2013  
Product data sheet  
1. General description  
Logic level N-channel MOSFET in an LFPAK56 (Power SO8) package using TrenchMOS  
technology. This product has been designed and qualified to AEC Q101 standard for use  
in high performance automotive applications.  
2. Features and benefits  
Q101 compliant  
Repetitive avalanche rated  
Suitable for thermally demanding environments due to 175 °C rating  
True logic level gate with VGS(th) rating of greater than 0.5 V at 175 °C  
3. Applications  
12 V, 24 V and 48 V Automotive systems  
Motors, lamps and solenoid control  
Transmission control  
Ultra high performance power switching  
4. Quick reference data  
Table 1.  
Symbol  
Quick reference data  
Parameter  
Conditions  
Min  
Typ  
Max  
80  
Unit  
V
VDS  
ID  
drain-source voltage  
drain current  
Tj ≥ 25 °C; Tj ≤ 175 °C  
VGS = 5 V; Tmb = 25 °C; Fig. 1  
-
-
-
-
-
-
62  
A
Ptot  
total power dissipation Tmb = 25 °C; Fig. 2  
147  
W
Static characteristics  
RDSon drain-source on-state  
resistance  
Dynamic characteristics  
QGD gate-drain charge  
VGS = 5 V; ID = 15 A; Tj = 25 °C; Fig. 11  
-
-
12.2  
8.7  
15  
-
mΩ  
nC  
VGS = 5 V; ID = 15 A; VDS = 64 V;  
Tj = 25 °C; Fig. 13; Fig. 14  
Scan or click this QR code to view the latest information for this product  
 
 
 
 

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