Datasheet > BSS84AKM

BSS84AKM

更新时间： 2023-09-03 20:32:34

品牌	Logo	应用领域
安世 - NEXPERIA		/
页数	文件大小	规格书
16页	1411K
描述
50 V, 230 mA P-channel Trench MOSFETProduction

阅读下载

中文翻译

获取价格

数据手册

如果您发现信息不准确，欢迎纠错

BSS84AKM 数据手册

BSS84AKM

50 V, 230 mA P-channel Trench MOSFET

Rev. 1 — 23 May 2011

Product data sheet

1. Product profile

1.1 General description

P-channel enhancement mode Field-Effect Transistor (FET) in a leadless ultra small

SOT883 (SC-101) Surface-Mounted Device (SMD) plastic package using Trench

MOSFET technology.

1.2 Features and benefits

Logic-level compatible

Very fast switching

ESD protection up to 1 kV

AEC-Q101 qualified

Trench MOSFET technology

1.3 Applications

Relay driver

High-side loadswitch

Switching circuits

High-speed line driver

1.4 Quick reference data

Table 1.

Symbol

V_DS

Quick reference data

Parameter

Conditions

Min Typ Max Unit

drain-source voltage

gate-source voltage

drain current

T_j= 25 °C

-50

V_GS

-20

[1]

I_D

V_GS= -10 V; T_amb= 25 °C

-230 mA

Static characteristics

R_DSondrain-source on-state

resistance

V_GS= -10 V; I_D= -100 mA;

T_j= 25 °C

4.5

7.5

Ω

[1] Device mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for drain 1 cm².

12 3 4 5 6 7...16

中文翻译

下载PDF

与BSS84AKM相关器件

型号	品牌	获取价格	描述	数据表
BSS84AKM,315	ETC	获取价格	MOSFET P-CH 50V SOT883
BSS84AKMB	NEXPERIA	获取价格	50 V, single P-channel Trench MOSFETProduction
BSS84AKMB,315	ETC	获取价格	MOSFET P-CH 50V 230MA 3DFN
BSS84AKQB	NEXPERIA	获取价格	50 V, P-channel Trench MOSFETProduction
BSS84AKS	NXP	获取价格	160mA, 50V, 2 CHANNEL, P-CHANNEL, Si, SMALL SIGNAL, MOSFET, PLASTIC, SC-88, TSSOP-6
BSS84AKS	NEXPERIA	获取价格	50 V, 160 mA dual P-channel Trench MOSFETProduction
BSS84AKT	NXP	获取价格	马来西亚
BSS84AKT,115	NXP	获取价格	BSS84AKT - 50 V, 150 mA P-channel Trench MOSFET SC-75 3-Pin
BSS84AKV	NXP	获取价格	50 V, 170 mA dual P-channel Trench MOSFET
BSS84AKV	NEXPERIA	获取价格	50 V, 170 mA dual P-channel Trench MOSFETProduction