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BSS84AKT,115 PDF预览

BSS84AKT,115

更新时间: 2024-02-06 10:12:39
品牌 Logo 应用领域
恩智浦 - NXP /
页数 文件大小 规格书
16页 858K
描述
BSS84AKT - 50 V, 150 mA P-channel Trench MOSFET SC-75 3-Pin

BSS84AKT,115 技术参数

生命周期:Obsolete零件包装代码:SC-75
包装说明:PLASTIC, SC-75, 3 PIN针数:3
Reach Compliance Code:compliant风险等级:5.76
Base Number Matches:1

BSS84AKT,115 数据手册

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BSS84AKT  
T416  
SO  
50 V, 150 mA P-channel Trench MOSFET  
Rev. 1 — 23 May 2011  
Product data sheet  
1. Product profile  
1.1 General description  
P-channel enhancement mode Field-Effect Transistor (FET) in a small SOT416 (SC-75)  
Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology.  
1.2 Features and benefits  
„ Logic-level compatible  
„ Very fast switching  
„ ESD protection up to 1 kV  
„ AEC-Q101 qualified  
„ Trench MOSFET technology  
1.3 Applications  
„ Relay driver  
„ High-side loadswitch  
„ Switching circuits  
„ High-speed line driver  
1.4 Quick reference data  
Table 1.  
Symbol  
VDS  
Quick reference data  
Parameter  
Conditions  
Min Typ Max Unit  
drain-source voltage  
gate-source voltage  
drain current  
Tj = 25 °C  
-
-
-
-
-50  
20  
V
V
VGS  
-20  
-
[1]  
ID  
VGS = -10 V; Tamb = 25 °C  
-150 mA  
Static characteristics  
RDSon drain-source on-state  
resistance  
VGS = -10 V; ID = -100 mA;  
Tj = 25 °C  
-
4.5  
7.5  
[1] Device mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for drain 1 cm2.  
 
 
 
 
 
 

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