Datasheet > BSS84DW_1

BSS84DW_1

更新时间： 2024-11-23 03:22:55

品牌	Logo	应用领域
美台 - DIODES		晶体晶体管场效应晶体管
页数	文件大小	规格书
4页	112K
描述
DUAL P-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR

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中文翻译

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BSS84DW_1 数据手册

BSS84DW

DUAL P-CHANNEL ENHANCEMENT MODE MOSFET

This device contains two electrically-isolated P-channel, enhancement-mode

MOSFETs, housed in a very small SOT-363 (SC70-6L) package. This device

is ideal for portable applications where board space is at a premium.

SOT- 363

FEATURES

Low On-Resistance

Low Gate Threshold Voltage

Fast Switching

Available in lead-free plating (100% matte tin finish)

APPLICATIONS

Switching Power Supplies

Hand-Held Computers, PDAs

MARKING CODE: S84

T = 25°C Unless otherwise noted

MAXIMUM RATINGS

Rating

Symbol

Value

- 50

Units

Drain-Source Voltage

Drain-Gate Voltage (Note 1)

Gate-Source Voltage

Drain Current

DSS

- 50

DGR

± 20

GSS

130

200

°C

Total Power Dissipation (Note 2)

Operating Junction Temperature Range

Storage Temperature Range

-55 to +150

°C

stg

Note 1. R < 20K ohms

THERMAL CHARACTERISTICS

Symbol

Characteristic

Value

625

Units

Thermal Resistance, Junction to Ambient (Note 2)

°C/W

thja

Note 2. FR-5 board 1.0 x 0.75 x 0.062 inch with minimum recommended pad layout

8/12/2005

Page 1

www.panjit.com

12 3 4

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