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BSS84DW_2

更新时间： 2024-09-24 09:00:35
品牌 Logo 应用领域
美台 - DIODES 晶体晶体管场效应晶体管
页数 文件大小 规格书
3页 194K
描述
DUAL P-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR

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中文翻译

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BSS84DW_2 数据手册

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BSS84DW  
DUAL P-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR  
Features  
Mechanical Data  
•
•
•
•
•
•
Low On-Resistance  
Low Gate Threshold Voltage  
Low Input Capacitance  
Fast Switching Speed  
Lead Free/RoHS Compliant (Note 3)  
"Green" Device (Note 5 and 6)  
•
•
Case: SOT-363  
Case Material: Molded Plastic. “Green” Molding Compound.  
UL Flammability Classification Rating 94V-0  
Moisture Sensitivity: Level 1 per J-STD-020C  
Terminals: Solderable per MIL-STD-202, Method 208  
•
•
•
Lead Free Plating (Matte Tin Finish annealed over Alloy 42  
leadframe).  
•
•
•
•
Terminal Connections: See Diagram  
Marking Information: See Page 3  
Ordering Information: See Page 3  
Weight: 0.006 grams (approximate)  
SOT-363  
D2  
G1  
S1  
S2  
G2  
D1  
TOP VIEW  
TOP VIEW  
Internal Schematic  
Maximum Ratings @TA = 25°C unless otherwise specified  
Characteristic  
Drain-Source Voltage  
Symbol  
VDSS  
VDGR  
VGSS  
ID  
Value  
-50  
Units  
V
Drain-Gate Voltage (Note 1)  
-50  
V
Gate-Source Voltage  
Drain Current (Note 2)  
Continuous  
Continuous  
V
±20  
-130  
mA  
Thermal Characteristics @TA = 25°C unless otherwise specified  
Characteristic  
Total Power Dissipation (Note 2)  
Symbol  
Pd  
Rθ  
Value  
300  
Units  
mW  
°C/W  
°C  
Thermal Resistance, Junction to Ambient  
Operating and Storage Temperature Range  
417  
JA  
-55 to +150  
Tj, TSTG  
Electrical Characteristics @TA = 25°C unless otherwise specified  
Characteristic  
OFF CHARACTERISTICS (Note 4)  
Drain-Source Breakdown Voltage  
Symbol Min Typ Max Unit  
Test Condition  
VGS = 0V, ID = -250μA  
-50 -75  
V
BVDSS  
⎯
VDS = -50V, VGS = 0V, TJ = 25°C  
VDS = -50V, VGS = 0V, TJ = 125°C  
VDS = -25V, VGS = 0V, TJ = 25°C  
VGS = ±20V, VDS = 0V  
⎯
⎯
⎯
⎯
⎯
⎯
-15  
-60  
-100 nA  
µA  
µA  
Zero Gate Voltage Drain Current  
IDSS  
IGSS  
Gate-Body Leakage  
nA  
⎯
⎯
±10  
ON CHARACTERISTICS (Note 4)  
Gate Threshold Voltage  
Static Drain-Source On-Resistance  
Forward Transconductance  
DYNAMIC CHARACTERISTICS  
Input Capacitance  
-0.8 -1.6 -2.0  
V
Ω
S
VGS(th)  
RDS (ON)  
gFS  
VDS = VGS, ID = -1mA  
VGS = -5V, ID = -0.100A  
VDS = -25V, ID = -0.1A  
6
10  
⎯
0.05  
⎯
⎯
45  
25  
12  
pF  
Ciss  
Coss  
Crss  
⎯
⎯
⎯
⎯
⎯
⎯
Output Capacitance  
pF VDS = -25V, VGS = 0V, f = 1.0MHz  
pF  
Reverse Transfer Capacitance  
SWITCHING CHARACTERISTICS  
Turn-On Delay Time  
10  
18  
ns  
ns RGEN = 50Ω, VGS = -10V  
tD(ON)  
tD(OFF)  
⎯
⎯
⎯
⎯
VDD = -30V, ID = -0.27A,  
Turn-Off Delay Time  
Notes:  
1. RGS ≤ 20KΩ.  
2. Device mounted on FR-4 PCB, 1 inch x 0.85 inch x 0.062 inch; pad layout as shown on Diodes Inc. suggested pad layout document AP02001, which  
can be found on our website at http://www.diodes.com/datasheets/ap02001.pdf.  
3. No purposefully added lead.  
4. Short duration pulse test used to minimize self-heating effect.  
5. Diodes Inc.'s "Green" policy can be found on our website at http://www.diodes.com/products/lead_free/index.php.  
6. Product manufactured with Date Code UO (week 40, 2007) and newer are built with Green Molding Compound. Product manufactured prior to Date  
Code UO are built with Non-Green Molding Compound and may contain Halogens or Sb2O3 Fire Retardants.  
1 of 3  
www.diodes.com  
November 2007  
© Diodes Incorporated  
BSS84DW  
Document number: DS30204 Rev. 13 - 2  
123

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