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BSS84AKW,115 PDF预览

BSS84AKW,115

更新时间: 2024-11-19 21:11:11
品牌 Logo 应用领域
恩智浦 - NXP 开关光电二极管晶体管
页数 文件大小 规格书
16页 851K
描述
BSS84AKW - 50 V, 150 mA P-channel Trench MOSFET SC-70 3-Pin

BSS84AKW,115 技术参数

Source Url Status Check Date:2013-06-14 00:00:00是否Rohs认证: 符合
生命周期:Transferred零件包装代码:SC-70
包装说明:PLASTIC, SC-70, 3 PIN针数:3
Reach Compliance Code:compliantECCN代码:EAR99
风险等级:5.72其他特性:LOGIC LEVEL COMPATIBLE
配置:SINGLE WITH BUILT-IN DIODE最小漏源击穿电压:50 V
最大漏极电流 (Abs) (ID):0.15 A最大漏极电流 (ID):0.15 A
最大漏源导通电阻:8.5 ΩFET 技术:METAL-OXIDE SEMICONDUCTOR
JESD-30 代码:R-PDSO-G3JESD-609代码:e3
湿度敏感等级:1元件数量:1
端子数量:3工作模式:ENHANCEMENT MODE
最高工作温度:150 °C封装主体材料:PLASTIC/EPOXY
封装形状:RECTANGULAR封装形式:SMALL OUTLINE
峰值回流温度(摄氏度):NOT SPECIFIED极性/信道类型:P-CHANNEL
最大功率耗散 (Abs):0.31 W参考标准:AEC-Q101; IEC-60134
子类别:Other Transistors表面贴装:YES
端子面层:Tin (Sn)端子形式:GULL WING
端子位置:DUAL处于峰值回流温度下的最长时间:NOT SPECIFIED
晶体管应用:SWITCHING晶体管元件材料:SILICON
Base Number Matches:1

BSS84AKW,115 数据手册

 浏览型号BSS84AKW,115的Datasheet PDF文件第2页浏览型号BSS84AKW,115的Datasheet PDF文件第3页浏览型号BSS84AKW,115的Datasheet PDF文件第4页浏览型号BSS84AKW,115的Datasheet PDF文件第5页浏览型号BSS84AKW,115的Datasheet PDF文件第6页浏览型号BSS84AKW,115的Datasheet PDF文件第7页 
BSS84AKW  
T323  
SO  
50 V, 150 mA P-channel Trench MOSFET  
Rev. 1 — 23 May 2011  
Product data sheet  
1. Product profile  
1.1 General description  
P-channel enhancement mode Field-Effect Transistor (FET) in a small SOT323 (SC-70)  
Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology.  
1.2 Features and benefits  
„ Logic-level compatible  
„ Very fast switching  
„ ESD protection up to 1 kV  
„ AEC-Q101 qualified  
„ Trench MOSFET technology  
1.3 Applications  
„ Relay driver  
„ High-side loadswitch  
„ Switching circuits  
„ High-speed line driver  
1.4 Quick reference data  
Table 1.  
Symbol  
VDS  
Quick reference data  
Parameter  
Conditions  
Min Typ Max Unit  
drain-source voltage  
gate-source voltage  
drain current  
Tj = 25 °C  
-
-
-
-
-50  
20  
V
V
VGS  
-20  
-
[1]  
ID  
VGS = -10 V; Tamb = 25 °C  
-150 mA  
Static characteristics  
RDSon drain-source on-state  
resistance  
VGS = -10 V; ID = -100 mA;  
Tj = 25 °C  
-
4.5  
7.5  
[1] Device mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for drain 1 cm2.  
 
 
 
 
 
 

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