Datasheet > BSS84D26Z

BSS84D26Z

更新时间： 2024-11-24 03:02:55

品牌	Logo	应用领域
飞兆/仙童 - FAIRCHILD		/
页数	文件大小	规格书
13页	522K
描述
Small Signal Field-Effect Transistor, 0.13A I(D), 50V, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-92

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BSS84D26Z 数据手册

May 1999

BSS84 / BSS110

P-Channel Enhancement Mode Field Effect Transistor

General Description

Features

These P-Channel enhancement mode power field effect

transistors are produced using Fairchild's proprietary, high

cell density, DMOS technology. This very high density

process is designed to minimize on-state resistance, provide

rugged and reliable performance and fast switching. They

can be used, with a minimum of effort, in most applications

requiring up to 0.17A DC and can deliver pulsed currents up

to 0.68A. This product is particularly suited to low voltage

applications requiring a low current high side switch.

BSS84: -0.13A, -50V. R_DS(ON)= 10W @ V_GS= -5V.

BSS110: -0.17A, -50V. R_DS(ON)= 10W @ V_GS= -10V

Voltage controlled p-channel small signal switch.

High density cell design for low R_DS(ON)

High saturation current.

____________________________________________________________________________________________

Absolute Maximum Ratings

Symbol Parameter

T_A= 25°C unless otherwise noted

BSS84

BSS110

Units

V_DSS

V_DGR

Drain-Source Voltage

-50

Drain-Gate Voltage (R_GS< 20 KW)

Gate-Source Voltage - Continuous

Drain Current - Continuous @ T_A= 30/35^oC

V_GSS

I_D

±20

-0.13

-0.52

0.36

-0.17

-0.68

0.63

- Pulsed

Maximum Power Dissipation T_A= 25°C

@ T_A= 25^oC

P_D

°C

T_J,T_STGOperating and Storage Temperature Range

-55 to 150

300

T_L

Maximum lead temperature for soldering

purposes, 1/16" from case for 10 seconds

THERMAL CHARACTERISTICS

Thermal Resistance, Junction-to-Ambient

350

200

°C/W

BSS84 Rev. C1 / BSS110. Rev. A2

12 3 4 5 6 7...13

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