BSS84DW

更新时间： 2024-09-23 22:39:39

品牌	Logo	应用领域
美台 - DIODES		晶体晶体管场效应晶体管
页数	文件大小	规格书
2页	50K
描述
DUAL P-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR

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中文翻译

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数据手册

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BSS84DW 数据手册

BSS84DW

DUAL P-CHANNEL ENHANCEMENT

MODE FIELD EFFECT TRANSISTOR

Features

Low On-Resistance

SOT-363

Low Gate Threshold Voltage

Low Input Capacitance

Fast Switching Speed

Dim

MinMax

0.10

0.30

1.35

2.20

D₂

G₁

S₁

1.15

2.00

KXX YY

Y Y K X X

Mechanical Data

0.65 Nominal

0.30

1.80

0.40

2.20

0.10

1.00

0.40

0.25

Case: SOT-363, Molded Plastic

S₂

G₂

D₁

Terminals: Solderable per MIL-STD-202,

Method 208

Terminal Connections: See Diagram

0.90

0.25

0.10

Marking: KXX: Product marking code

YY: Date code

Marking Code: K84

All Dimensions in mm

Weight: 0.006 grams (approx.)

D₂

G₁

S₁

S₂

G₂

D₁

@ T_A= 25°C unless otherwise specified

Maximum Ratings

Characteristic

Symbol

V_DSS

V_DGR

V_GSS

I_D

BSS84DW

-50

Units

Drain-Source Voltage

-50

Drain-Gate Voltage (Note 3)

Gate-Source Voltage

Continuous

±20

°C/W

°C

Drain Current (Note 1)

-130

P_d

Total Power Dissipation (Note 1)

Thermal Resistance, Junction to Ambient

Operating and Storage Temperature Range

200

R_qJA

625

T_j, T_STG

-55 to +150

Note: 1. Valid provided that terminals are kept at specified ambient temperature.

2. Pulse width £ 300ms, duty cycle £ 2%.

3. R_GS£ 20KW.

DS30204 Rev. C-2

1 of 2

BSS84DW

中文翻译

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