Datasheet > BSS84DW

BSS84DW

更新时间： 2024-04-09 19:02:21

品牌	Logo	应用领域
银河微电 - BL Galaxy Electrical		/
页数	文件大小	规格书
4页	471K
描述
0.13A, 50V, 0.3W, P Channel, Small Signal MOSFETs

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BSS84DW 数据手册

P-Channel Enhancement Mode MOSFET

BSS84DW

Features



Low on-resistance

High-speed switching

Drive circui ts can be simple

Parallel use is easy

Typical Applications



P-channel enhancement mode effect transistor

Switching application

Mechanical Data

BSS84DW

SOT-363



Case: SOT-363

Molding Compound, UL Flammability Classification Rating 94V-0

Terminals: Matte Tin Plated Leads, Solderable Per MIL-STD-202, Method 208

Ordering Information

Part Number

Package

Shipping

Marking Code

BSS84DW

SOT-363

3000pcs / Tape & Reel

K84

Maximum Ratings (@T_A=25℃ unless otherwise specified)

Parameter

Symbol

V_DSS

V_GSS

I_D

Value

-50

Units

Drain-Source Voltage

Gate -Source Voltage

±12

Continuous Drain Current ^(NOTE1)

Power Dissipation ^(NOTE1)

-130

0.3

P_D

Thermal Characteristics

Parameter

Symbol

R_θJA

T_j

Limits

Unit

℃/W

℃

Thermal Resistance Junction to Ambient Air

Operating Junction Temperature Range

Storage Temperature Range

417

-55 to +150

T_STG

℃

MTM0107A

www.gmesemi.com

12 3 4

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BSS84DW-7-F	DIODES	获取价格	DUAL P-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR
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