BSS84AKV

更新时间： 2024-11-19 12:54:31

品牌	Logo	应用领域
恩智浦 - NXP		/
页数	文件大小	规格书
17页	876K
描述
50 V, 170 mA dual P-channel Trench MOSFET

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BSS84AKV 数据手册

BSS84AKV

T666

50 V, 170 mA dual P-channel Trench MOSFET

Rev. 1 — 19 May 2011

Product data sheet

1. Product profile

1.1 General description

Dual P-channel enhancement mode Field-Effect Transistor (FET) in an ultra small and flat

lead SOT666 Surface-Mounted Device (SMD) plastic package using Trench MOSFET

technology.

1.2 Features and benefits

Logic-level compatible

Very fast switching

ESD protection up to 1 kV

AEC-Q101 qualified

Trench MOSFET technology

1.3 Applications

Relay driver

High-side loadswitch

Switching circuits

High-speed line driver

1.4 Quick reference data

Table 1.

Symbol

Quick reference data

Parameter

Conditions

Min Typ Max Unit

Per transistor

V_DS

V_GS

I_D

drain-source voltage

T_j= 25 °C

-50

gate-source voltage

drain current

-20

[1]

V_GS= -10 V; T_amb= 25 °C

-170 mA

Static characteristics (per transistor)

R_DSon

drain-source on-state

resistance

V_GS= -10 V; I_D= -100 mA;

T_j= 25 °C

4.5

7.5

Ω

[1] Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated, mounting pad for

drain 1 cm².

12 3 4 5 6 7...17

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