Datasheet > BSS84AKMB,315

BSS84AKMB,315

更新时间： 2024-11-19 22:59:23

品牌	Logo	应用领域
其他 - ETC		开关晶体管
页数	文件大小	规格书
14页	250K
描述
MOSFET P-CH 50V 230MA 3DFN

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BSS84AKMB,315 数据手册

BSS84AKMB

50 V, single P-channel Trench MOSFET

27 October 2020

Product data sheet

1. General description

P-channel enhancement mode Field-Effect Transistor (FET) in a leadless ultra small DFN1006B-3

(SOT883B) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology.

2. Features and benefits

•

Logic-level compatible

•

Very fast switching

Trench MOSFET technology

ESD protection up to 1 kV

Ultra thin package profile with 0.37 mm height

3. Applications

•

Relay driver

High-speed line driver

High-side load switch

Switching circuits

4. Quick reference data

Table 1. Quick reference data

Symbol

V_DS

Parameter

Conditions

Min

Typ

Max

-50

Unit

drain-source voltage

gate-source voltage

drain current

T_j= 25 °C

V_GS

-20

I_D

V_GS= -10 V; T_amb= 25 °C

[1]

-230

Static characteristics

R_DSondrain-source on-state

resistance

V_GS= -10 V; I_D= -100 mA; T_j= 25 °C

4.5

7.5

[1] Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated, mounting pad for drain 1 cm².

12 3 4 5 6 7...14

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