Datasheet > BSP295

BSP295

更新时间： 2024-09-12 22:39:39

品牌	Logo	应用领域
英飞凌 - INFINEON		晶体晶体管
页数	文件大小	规格书
9页	182K
描述
SIPMOS Small-Signal Transistor (N channel Enhancement mode Logic Level)

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中文翻译

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数据手册
替代型号

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BSP295 数据手册

BSP 295

SIPMOS Small-Signal Transistor

• N channel

• Enhancement mode

• Logic Level

• V

= 0.8...2.0V

GS(th)

Pin 1 Pin 2 Pin 3 Pin 4

Type

Package

Marking

DS(on)

Ω

BSP 295

50 V

1.8 A

0.3

SOT-223

BSP 295

Type

Ordering Code

Tape and Reel Information

BSP 295

Q67000-S066

E6327

Maximum Ratings

Parameter

Symbol

Values

Unit

Drain source voltage

Drain-gate voltage

DGR

Ω

= 20 k

Gate source voltage

Gate-source peak voltage,aperiodic

Continuous drain current

± 20

1.8

7.2

1.8

T = 34 °C

DC drain current, pulsed

Dpuls

T = 25 °C

Power dissipation

tot

T = 25 °C

Semiconductor Group

Sep-12-1996

12 3 4 5 6 7...9

中文翻译

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BSP295 替代型号

型号	品牌	替代类型	描述	数据表
BSP295E6327	INFINEON	功能相似	Power Field-Effect Transistor, 1.8A I(D), 50V, 0.5ohm, 1-Element, N-Channel, Silicon, Meta
BSP295L6327	INFINEON	功能相似	SIPMOSï Small-Signal-Transistor

与BSP295相关器件

型号	品牌	获取价格	描述	数据表
BSP295_07	INFINEON	获取价格	SIPMOS Small-Signal-Transistor
BSP295E6327	INFINEON	获取价格	Power Field-Effect Transistor, 1.8A I(D), 50V, 0.5ohm, 1-Element, N-Channel, Silicon, Meta
BSP295E-6327	INFINEON	获取价格	1.8A, 50V, 0.3ohm, N-CHANNEL, Si, POWER, MOSFET, SOT-223, 4 PIN
BSP295H6327	INFINEON	获取价格	Power Field-Effect Transistor, 1.8A I(D), 60V, 0.5ohm, 1-Element, N-Channel, Silicon, Meta
BSP295H6327XTSA1	INFINEON	获取价格	Power Field-Effect Transistor, 1.8A I(D), 60V, 0.5ohm, 1-Element, N-Channel, Silicon, Meta
BSP295L6327	INFINEON	获取价格	SIPMOSï Small-Signal-Transistor
BSP295L6327HTSA1	INFINEON	获取价格	Power Field-Effect Transistor, 1.8A I(D), 60V, 0.5ohm, 1-Element, N-Channel, Silicon, Meta
BSP296	INFINEON	获取价格	SIPMOS Small-Signal Transistor (N channel Enhancement mode Logic Level)
BSP296_09	INFINEON	获取价格	SIPMOS Small-Signal-Transistor
BSP296E6327	ROCHESTER	获取价格	暂无描述