Datasheet > BSP296L6433HTMA1

BSP296L6433HTMA1

更新时间： 2024-11-27 20:43:15

品牌	Logo	应用领域
英飞凌 - INFINEON		光电二极管
页数	文件大小	规格书
8页	300K
描述
Power Field-Effect Transistor, 1.1A I(D), 100V, 0.7ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, GREEN, PLASTIC PACKAGE-4

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中文翻译

获取价格

技术参数
数据手册
替代型号

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BSP296L6433HTMA1 技术参数

生命周期：	Obsolete	包装说明：	SMALL OUTLINE, R-PDSO-G4
针数：	4	Reach Compliance Code：	unknown
ECCN代码：	EAR99	HTS代码：	8541.29.00.95
风险等级：	5.65	Base Number Matches：	1

BSP296L6433HTMA1 数据手册

Rev. 2.1

BSP296



SIPMOS Small-Signal-Transistor

Feature

Product Summary

100

0.7

1.1

Ω

• N-Channel

DS(on)

• Enhancement mode

• Logic Level

PG-SOT223

• dv/dt rated

Pb-free lead plating; RoHS compliant

•

x Qualified according to AEC Q101

VPS05163

Type

Package

Tape and Reel Information

L6433: 4000 pcs/reel

Marking Packaging

PG-SOT223

BSP296

BSP296 Non dry

Non dry

BSP296

PG-SOT223

L6327: 1000 pcs/reel

Maximum Ratings, at

= 25 °C, unless otherwise specified

Parameter

Symbol

Value

Unit

Continuous drain current

T =25°C

1.1

0.88

4.4

T =70°C

Pulsed drain current

D puls

T =25°C

kV/µs

Reverse diode dv/dt

dv/dt

I =1.1A, V =80V, di/dt=200A/µs, T

S DS jmax

=150°C

Gate source voltage

ESD (JESD22-A114-HBM)

Power dissipation

±20

1B (>500V, <1000V)

1.79

tot

T =25°C

°C

Operating and storage temperature

IEC climatic category; DIN IEC 68-1

-55... +150

55/150/56

stg

Page 1

2009-08-18

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BSP296L6433HTMA1 替代型号

型号	品牌	替代类型	描述	数据表
BSP296NH6433XTMA1	INFINEON	类似代替	Power Field-Effect Transistor, 1.2A I(D), 100V, 0.6ohm, 1-Element, N-Channel, Silicon, Met

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