型号 | 品牌 | 获取价格 | 描述 | 数据表 |
BSP296E6327 | ROCHESTER |
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暂无描述 | |
BSP296E6327 | INFINEON |
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Power Field-Effect Transistor, 1A I(D), 100V, 1.4ohm, 1-Element, N-Channel, Silicon, Metal | |
BSP296E-6327 | INFINEON |
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1A, 100V, 0.8ohm, N-CHANNEL, Si, POWER, MOSFET, SOT-223, 4 PIN | |
BSP296E-6327 | ROCHESTER |
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1A, 100V, 0.8ohm, N-CHANNEL, Si, POWER, MOSFET, SOT-223, 4 PIN | |
BSP296L6327 | INFINEON |
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SIPMOSï Small-Signal-Transistor | |
BSP296L6327HTSA1 | INFINEON |
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Power Field-Effect Transistor, 1.1A I(D), 100V, 0.7ohm, 1-Element, N-Channel, Silicon, Met | |
BSP296L6433 | INFINEON |
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Power Field-Effect Transistor, 1.1A I(D), 100V, 0.7ohm, 1-Element, N-Channel, Silicon, Met | |
BSP296L6433HTMA1 | INFINEON |
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Power Field-Effect Transistor, 1.1A I(D), 100V, 0.7ohm, 1-Element, N-Channel, Silicon, Met | |
BSP296N | INFINEON |
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所有的小型单个 n 通道系列产品均适合汽车应用(2N7002 除外)。 | |
BSP296NH6327 | INFINEON |
获取价格 |
Power Field-Effect Transistor, 1.2A I(D), 100V, 0.6ohm, 1-Element, N-Channel, Silicon, Met |