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BSP295H6327

更新时间: 2024-11-04 19:51:55
品牌 Logo 应用领域
英飞凌 - INFINEON 脉冲光电二极管晶体管
页数 文件大小 规格书
8页 442K
描述
Power Field-Effect Transistor, 1.8A I(D), 60V, 0.5ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, GREEN, PLASTIC PACKAGE-4

BSP295H6327 技术参数

是否Rohs认证: 符合生命周期:Active
包装说明:SMALL OUTLINE, R-PDSO-G4针数:4
Reach Compliance Code:compliantECCN代码:EAR99
HTS代码:8541.29.00.95风险等级:5.61
外壳连接:DRAIN配置:SINGLE WITH BUILT-IN DIODE
最小漏源击穿电压:60 V最大漏极电流 (Abs) (ID):1.8 A
最大漏极电流 (ID):1.8 A最大漏源导通电阻:0.5 Ω
FET 技术:METAL-OXIDE SEMICONDUCTORJESD-30 代码:R-PDSO-G4
JESD-609代码:e3元件数量:1
端子数量:4工作模式:ENHANCEMENT MODE
最高工作温度:150 °C封装主体材料:PLASTIC/EPOXY
封装形状:RECTANGULAR封装形式:SMALL OUTLINE
峰值回流温度(摄氏度):NOT SPECIFIED极性/信道类型:N-CHANNEL
最大功率耗散 (Abs):1.8 W最大脉冲漏极电流 (IDM):7.2 A
参考标准:AEC-Q101子类别:FET General Purpose Power
表面贴装:YES端子面层:MATTE TIN
端子形式:GULL WING端子位置:DUAL
处于峰值回流温度下的最长时间:NOT SPECIFIED晶体管元件材料:SILICON
Base Number Matches:1

BSP295H6327 数据手册

 浏览型号BSP295H6327的Datasheet PDF文件第2页浏览型号BSP295H6327的Datasheet PDF文件第3页浏览型号BSP295H6327的Datasheet PDF文件第4页浏览型号BSP295H6327的Datasheet PDF文件第5页浏览型号BSP295H6327的Datasheet PDF文件第6页浏览型号BSP295H6327的Datasheet PDF文件第7页 
Rev 2.3  
BSP295  
SIPMOS Small-Signal-Transistor  
Feature  
Product Summary  
V
60  
0.3  
1.8  
V
DS  
N-Channel  
R
DS(on)  
Enhancement mode  
dv/dt rated  
I
A
D
PG-SOT223  
Pb-free lead plating; RoHS compliant  
x Qualified according to AEC Q101  
4
Halogen­free according to IEC61249­2­21  
3
2
1
VPS05163  
Marking Packaging  
Type  
Package  
Tape and Reel Information  
H
6327: 1000 pcs/reel  
PG-SOT223  
BSP295 Non dry  
BSP295  
Maximum Ratings, at T = 25 °C, unless otherwise specified  
j
Parameter  
Symbol  
Value  
Unit  
A
Continuous drain current  
I
D
T =25°C  
1.8  
1.44  
7.2  
A
T =70°C  
A
Pulsed drain current  
I
D puls  
T =25°C  
A
Reverse diode dv/dt  
dv/dt  
6
kV/µs  
V
I =1.8A, V =40V, di/dt=200A/µs, T  
DS jmax  
S
=150°C  
Gate source voltage  
V
±20  
1B (>500V, <1000V)  
1.8  
GS  
ESD class (JESD22-A114-HBM)  
Power dissipation  
P
W
tot  
T =25°C  
A
°C  
Operating and storage temperature  
IEC climatic category; DIN IEC 68-1  
T
,
T
-55... +150  
55/150/56  
j
stg  
Page 1  
2012-11-28  

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