Datasheet > BSP171P_07

BSP171P_07

更新时间： 2024-11-06 09:00:27

品牌	Logo	应用领域
英飞凌 - INFINEON		/
页数	文件大小	规格书
9页	238K
描述
SIPMOS Small-Signal-Transistor

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中文翻译

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数据手册

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BSP171P_07 数据手册

BSP171P

SIPMOS^®Small-Signal-Transistor

Product Summary

Features

V _DS

-60

Ω

• P-Channel

R _DS(on),max

I _D

0.3

• Enhancement mode

-1.9

• Logic level

• Avalanche rated

• dv /dt rated

PG-SOT-223

• Pb-free lead plating; RoHS compliant

Type

Package

Tape and Reel Information

Marking

BSP 171 P PG-SOT-223

L6327: 1000 pcs/reel

171P

Maximum ratings, at T _j=25 °C, unless otherwise specified

Value

Parameter

Symbol Conditions

Unit

steady state

T _A=25 °C¹⁾

T _A=70 °C¹⁾

I _D

-1.9

-1.5

-7.6

Continuous drain current

I _D,pulse

E _AS

T _A=25 °C

Pulsed drain current

I _D=-1.9 A, R _GS=25 Ω

I _D=-1.9 A,

Avalanche energy, single pulse

_DS=-48 V,

di /dt =-200 A/µs,

_j,max=150 °C

-6

Reverse diode dv /dt

dv /dt

kV/µs

V _GS

±20

1.8

Gate source voltage

T _A=25 °C¹⁾

P _tot

Power dissipation

°C

T _j, T _stg

-55 ... 150

55/150/56

Operating and storage temperature

IEC climatic category; DIN IEC 68-1

Rev 2.4

page 1

2007-02-08

12 3 4 5 6 7...9

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