生命周期: | Obsolete | 包装说明: | SMALL OUTLINE, R-PDSO-G4 |
Reach Compliance Code: | unknown | ECCN代码: | EAR99 |
HTS代码: | 8541.29.00.75 | 风险等级: | 5.14 |
外壳连接: | DRAIN | 配置: | SINGLE WITH BUILT-IN DIODE |
最小漏源击穿电压: | 300 V | 最大漏极电流 (ID): | 0.3 A |
最大漏源导通电阻: | 8 Ω | FET 技术: | METAL-OXIDE SEMICONDUCTOR |
最大反馈电容 (Crss): | 15 pF | JESD-30 代码: | R-PDSO-G4 |
元件数量: | 1 | 端子数量: | 4 |
工作模式: | ENHANCEMENT MODE | 最高工作温度: | 150 °C |
封装主体材料: | PLASTIC/EPOXY | 封装形状: | RECTANGULAR |
封装形式: | SMALL OUTLINE | 极性/信道类型: | N-CHANNEL |
最大脉冲漏极电流 (IDM): | 1.4 A | 认证状态: | Not Qualified |
表面贴装: | YES | 端子形式: | GULL WING |
端子位置: | DUAL | 晶体管应用: | SWITCHING |
晶体管元件材料: | SILICON | 最大关闭时间(toff): | 30 ns |
最大开启时间(吨): | 10 ns | Base Number Matches: | 1 |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
BSP135 | INFINEON |
获取价格 |
SIPMOS Small-Signal Transistor (N channel Depletion mode High dynamic resistance) | |
BSP135_10 | INFINEON |
获取价格 |
SIPMOS Small-Signal-Transistor | |
BSP135H6327 | INFINEON |
获取价格 |
Power Field-Effect Transistor, 0.12A I(D), 600V, 45ohm, 1-Element, N-Channel, Silicon, Met | |
BSP135H6327XTSA1 | INFINEON |
获取价格 |
Power Field-Effect Transistor, 0.12A I(D), 600V, 45ohm, 1-Element, N-Channel, Silicon, Met | |
BSP135H6433XTMA1 | INFINEON |
获取价格 |
Power Field-Effect Transistor, 0.12A I(D), 600V, 45ohm, 1-Element, N-Channel, Silicon, Met | |
BSP135H6906 | INFINEON |
获取价格 |
Power Field-Effect Transistor, 0.12A I(D), 600V, 45ohm, 1-Element, N-Channel, Silicon, Met | |
BSP135I | INFINEON |
获取价格 |
N-沟道耗尽模式 MOSFET BSP135I 采用 SOT-223 封装,其特性为 VD | |
BSP135L6327HTSA1 | INFINEON |
获取价格 |
Power Field-Effect Transistor, 0.12A I(D), 600V, 45ohm, 1-Element, N-Channel, Silicon, Met | |
BSP135L6906 | INFINEON |
获取价格 |
Power Field-Effect Transistor, 0.12A I(D), 600V, 45ohm, 1-Element, N-Channel, Silicon, Met | |
BSP135L6906HTSA1 | INFINEON |
获取价格 |
Power Field-Effect Transistor, 0.12A I(D), 600V, 45ohm, 1-Element, N-Channel, Silicon, Met |