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BSP135H6906 PDF预览

BSP135H6906

更新时间: 2024-09-16 03:23:55
品牌 Logo 应用领域
英飞凌 - INFINEON 脉冲光电二极管晶体管
页数 文件大小 规格书
9页 481K
描述
Power Field-Effect Transistor, 0.12A I(D), 600V, 45ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, GREEN, PLASTIC PACKAGE-4

BSP135H6906 技术参数

是否无铅: 不含铅是否Rohs认证: 符合
生命周期:Active包装说明:SMALL OUTLINE, R-PDSO-G4
针数:4Reach Compliance Code:compliant
ECCN代码:EAR99HTS代码:8541.29.00.95
风险等级:5.82外壳连接:DRAIN
配置:SINGLE WITH BUILT-IN DIODE最小漏源击穿电压:600 V
最大漏极电流 (Abs) (ID):0.12 A最大漏极电流 (ID):0.12 A
最大漏源导通电阻:45 ΩFET 技术:METAL-OXIDE SEMICONDUCTOR
JESD-30 代码:R-PDSO-G4JESD-609代码:e3
元件数量:1端子数量:4
工作模式:DEPLETION MODE最高工作温度:150 °C
封装主体材料:PLASTIC/EPOXY封装形状:RECTANGULAR
封装形式:SMALL OUTLINE峰值回流温度(摄氏度):260
极性/信道类型:N-CHANNEL最大功率耗散 (Abs):1.8 W
最大脉冲漏极电流 (IDM):0.48 A参考标准:AEC-Q101
子类别:FET General Purpose Power表面贴装:YES
端子面层:MATTE TIN端子形式:GULL WING
端子位置:DUAL处于峰值回流温度下的最长时间:40
晶体管元件材料:SILICON

BSP135H6906 数据手册

 浏览型号BSP135H6906的Datasheet PDF文件第2页浏览型号BSP135H6906的Datasheet PDF文件第3页浏览型号BSP135H6906的Datasheet PDF文件第4页浏览型号BSP135H6906的Datasheet PDF文件第5页浏览型号BSP135H6906的Datasheet PDF文件第6页浏览型号BSP135H6906的Datasheet PDF文件第7页 
BSP135  
SIPMOS® Small-Signal-Transistor  
Product Summary  
VDS  
Features  
600  
V
W
A
• N-channel  
• Depletion mode  
RDS(on),max  
IDSS,min  
60  
0.02  
• dv /dt rated  
• Available with V GS(th) indicator on reel  
• Pb-free lead plating; RoHS compliant  
• Qualified according to AEC Q101  
PG-SOT223  
Halogen­free according to IEC61249­2­21  
Type  
Package  
Tape and Reel Information  
Marking  
Packaging  
BSP135  
PG-SOT223  
H6327: 1000 pcs/reel  
BSP135  
Non dry  
BSP135  
PG-SOT223  
H6906: 1000 pcs/reel  
BSP135  
Non dry  
sorted in V  
bands 1)  
GS(th)  
Maximum ratings, at T j=25 °C, unless otherwise specified  
Value  
Parameter  
Symbol Conditions  
Unit  
I D  
T A=25 °C  
T A=70 °C  
T A=25 °C  
Continuous drain current  
0.12  
0.10  
0.48  
A
I D,pulse  
dv /dt  
V GS  
Pulsed drain current  
Reverse diode dv /dt  
Gate source voltage  
I D=0.12 A, V DS=20 V,  
di /dt =200 A/µs,  
T j,max=150 °C  
6
kV/µs  
V
±20  
ESD Class  
(JESD22-A114-HBM)  
1A(>250V,<500V)  
P tot  
T A=25 °C  
Power dissipation  
1.8  
W
T j, T stg  
Operating and storage temperature  
IEC climatic category; DIN IEC 68-1  
-55 ... 150  
55/150/56  
°C  
1)  
see table on next page and diagram 11  
Rev. 1.33  
page 1  
2012-11-29  

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